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Part: 2SB774
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: V<SUB>CEO</SUB>(V) = -25 ;; I<SUB>C</SUB>(A) = -0.1 ;; HFE(min) = 210 ;; HFE(max) = 460 ;; Package = TO-92-A1TO-92-B1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SB774 datasheet File size : 179 kB
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Datasheet text preview:
Transistors
2SB0774 (2SB774)
Silicon PNP epitaxial planar type
For low-frequency amplification
5.0±0.2
Unit: mm
4.0±0.2
0.7±0.1
0.7±0.2 12.9±0.5
· High emitter-base voltage (Collector open) VEBO · Protective diodes and resistances between emitter and base can be omitted.
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO IC ICP PC Tj Tstg Rating -3 0 -2 5 -1 5 -100 -200 400 150 -55 to +150 Unit V V
2.3±0.2
01 0.45+0..15 06 2.5+0..2
5.1±0.2
01 0.45+0..15 06 2.5+0..2
Features
V mA mA mW °C °C
1
23
1: Emitter 2: Collector 3: Base EIAJ: SC-43A TO-92-B1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio Symbol V CBO V CEO V EBO ICBO ICEO hF E 1 * h FE2 Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common-emitter reverse transfer) V CE(sat) fT Co b Conditions IC = -10 µA, IE = 0 IC = -2 mA, IB = 0 IE = -10 µA, IC = 0 VCB = -10 V, IE = 0 VCE = -20 V, IB = 0 VCE = -10 V, IC = -2 mA VCE = -2 V, IC = -100 mA IC = -100 mA, IB = -10 mA VCB = -10 V, IE = 2 mA, f = 200 MHz VCB = -10 V, IE = 0, f = 1 MHz 150 4 210 90 - 0.5 Min -3 0 -2 5 -1 5 -1 -100 460 Typ Max Unit V V V µA µA V MHz pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 R 210 to 340 S 290 to 460
Note) The part number in the parenthesis shows conventional part number.
Publication date: March 2003 SJC00053BED
1
2SB0774
PC Ta
500
-240 Ta = 25°C
IC VCE
-200
IC VBE
IB = -1.8 mA -1.6 mA -1.4 mA -1.2 mA -1.0 mA - 0.8 mA - 0.6 mA - 0.4 mA - 0.2 mA
VCE = -10 V
Collector power dissipation PC (mW)
400
-200
Collector current IC (mA)
-160
300
Collector current IC (mA)
-160
-120 25°C -80 Ta = 75°C -25°C
-120
200
-80
100
-40
-40
0
0
40
80
120
160
0
0
-2
-4
-6
-8
-10
-12
0
0
- 0.4
- 0.8
-1.2
-1.6
-2.0
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
-100 IC / IB = 10
600
hFE IC
VCE = -10 V
1 000
fT I E
VCB = -10 V Ta = 25°C
Forward current transfer ratio hFE
-10
400
Ta = 75°C 25°C
-1
300 -25°C 200
Transition frequency fT (MHz)
-10 -100
500
100
- 0.1
25°C
Ta = 75°C -25°C
100
- 0.01 - 0.1
-1
-10
-100
0 - 0.1
-1
10 0.1
1
10
100
Collector current IC (mA)
Collector current IC (mA)
Emitter current IE (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
12 IE = 0 f = 1 MHz Ta = 25°C
10
8
6
4
2
0 -1
-10
-100
Collector-base voltage VCB (V)
2
SJC00053BED
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