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Part: 2SB949
Category:
Discrete
-> Transistors
-> Bipolar
-> Power
-> General Purpose
Description: V<SUB>CEO</SUB>(V) = -60 ;; I<SUB>C</SUB>(A) = -2 ;; HFE(min) = 1000 ;; HFE(max) = ;; Package = TO-220F-A1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SB949 datasheet File size : 178 kB
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Datasheet text preview:
Power Transistors
2SB0949 (2SB949), 2SB0949A (2SB949A)
Silicon PNP epitaxial planar type darlington
4.2±0.2
Unit: mm
0.7±0.1
10.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2
For power amplification and switching Complementary to 2SD1275 and 2SD1275A
· High forward current transfer ratio hFE · High-speed switching · Full-pack package which can be installed to the heat sink with one screw
16.7±0.3
7.5±0.2
Features
3.1±0.1
Solder Dip (4.0)
14.0±0.5
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SB0949 2SB0949A V CEO V EBO IC ICP TC = 25°C PC Tj Tstg Symbol V CBO Rating -6 0 -8 0 -6 0 -8 0 -5 -2 -4 35 2 150 -55 to +150 °C °C V A A W V Unit V
1.4±0.1
1.3±0.2
02 0.5+0..1
0.8±0.1
2.54±0.3 5.08±0.5
Collector-emitter voltage 2SB0949 (Base open) 2SB0949A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
123
1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package
Internal Connection
C B
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) 2SB0949 2SB0949A 2SB0949 2SB0949A IEBO h FE1 hF E 2 * Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time V CE(sat) fT to n tstg tf ICEO 2SB0949 2SB0949A VBE ICBO VCE = -4 V, IC = -2 A VCB = -60 V, IE = 0 VCB = -80 V, IE = 0 VCE = -30 V, IB = 0 VCE = -40 V, IB = 0 VEB = -5 V, IC = 0 VCE = -4 V, IC = -1 A VCE = -4 V, IC = -2 A IC = -2 A, IB = -8 mA VCE = -10 V, IC = - 0.5 A, f = 1 MHz IC = -2 A, IB1 = -8 mA, IB2 = 8 mA VCC = -50 V 20 0.4 1.5 0.5 1 000 1 000 Symbol V CEO Conditions IC = -30 mA, IB = 0 Min -6 0 -8 0 Typ
E Max Unit V -2.8 -1 -1 -2 -2 -2 10 000 -2.5 V MHz µs µs µs mA mA
V mA
Emitter-base cutoff current (Collector open) Forward current transfer ratio
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE2 R 1 000 to 2 500 Q P
2 000 to 5 000 4 000 to 10 000 Note) The part numbers in the parenthesis show conventional part number.
Publication date: April 2003
SJD00028BED
1
2SB0949, 2SB0949A
PC Ta
50
IC VCE
-5
-10
TC=25°C
IC VBE
VCE=4V
Collector power dissipation PC (W)
40
Collector current IC (A)
30
-3
Collector current IC (A)
(1)TC=Ta (2)With a 100×100×2mm Al heat sink (3)With a 50×50×2mm Al heat sink (4)Without heat sink (PC=2W)
-4
IB=2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA
-8
-6
25°C
20
(1)
-2
4.0mA
-4
TC=100°C
25°C
10 (3) (4) 0 0 40
(2)
-1
0.2mA 0.1mA
-2
80
120
160
0
0
-1
-2
-3
-4
-5
0
0
- 0.8
-1.6
-2.4
-3.2
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
-100
IC/IB=250
hFE IC
VCE=4V
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
104
IE=0 f=1MHz TC=25°C
105
Forward current transfer ratio hFE
-10
104
TC=100°C
25°C
103
25°C
-1
TC=100°C 25°C 25°C
103
102
- 0.1
102
10
- 0.01 - 0.01
- 0.1
-1
-10
10 - 0.01
- 0.1
-1
-10
1 - 0.1
-1
-10
-100
Collector current IC (A)
Collector current IC (A)
Collector-base voltage VCB (V)
Safe operation area
-100
Non repetitive pulse TC=25°C
Rth t
103 (1)Without heat sink (2)With a 100×100×2mm Al heat sink (1)
Thermal resistance Rth (°C/W)
Collector current IC (A)
-10
ICP t=1ms IC DC
102
10
(2)
-1
t=10ms
1
- 0.1
2SB0949A 2SB0949
10-1
- 0.01 -1
-10
-100
-1 000
10-2 10-4
10-3
10-2
10-1
1
10
102
103
104
Collector-emitter voltage VCE (V)
Time t (s)
2
SJD00028BED
Others parts begin by 2s
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