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Part: 2SB949A

Category:
 Discrete
   -> Transistors
     -> Bipolar
       -> Power
         -> General Purpose

Description: V<SUB>CEO</SUB>(V) = -80 ;; I<SUB>C</SUB>(A) = -2 ;; HFE(min) = 1000 ;; HFE(max) = ;; Package = TO-220F-A1

Company: Panasonic Industrial Company/Electronic Components

Datasheet: Download 2SB949A datasheet     File size : 178 kB

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Datasheet text preview:
Power Transistors

2SB0949 (2SB949), 2SB0949A (2SB949A)
Silicon PNP epitaxial planar type darlington
4.2±0.2

Unit: mm
0.7±0.1
10.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2

For power amplification and switching Complementary to 2SD1275 and 2SD1275A
· High forward current transfer ratio hFE · High-speed switching · Full-pack package which can be installed to the heat sink with one screw
16.7±0.3

7.5±0.2

Features

3.1±0.1

Solder Dip (4.0)

14.0±0.5

Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SB0949 2SB0949A V CEO V EBO IC ICP TC = 25°C PC Tj Tstg Symbol V CBO Rating -6 0 -8 0 -6 0 -8 0 -5 -2 -4 35 2 150 -55 to +150 °C °C V A A W V Unit V

1.4±0.1

1.3±0.2
02 0.5+0..1 ­

0.8±0.1

2.54±0.3 5.08±0.5

Collector-emitter voltage 2SB0949 (Base open) 2SB0949A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature

123

1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package

Internal Connection
C B

Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) 2SB0949 2SB0949A 2SB0949 2SB0949A IEBO h FE1 hF E 2 * Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time V CE(sat) fT to n tstg tf ICEO 2SB0949 2SB0949A VBE ICBO VCE = -4 V, IC = -2 A VCB = -60 V, IE = 0 VCB = -80 V, IE = 0 VCE = -30 V, IB = 0 VCE = -40 V, IB = 0 VEB = -5 V, IC = 0 VCE = -4 V, IC = -1 A VCE = -4 V, IC = -2 A IC = -2 A, IB = -8 mA VCE = -10 V, IC = - 0.5 A, f = 1 MHz IC = -2 A, IB1 = -8 mA, IB2 = 8 mA VCC = -50 V 20 0.4 1.5 0.5 1 000 1 000 Symbol V CEO Conditions IC = -30 mA, IB = 0 Min -6 0 -8 0 Typ

E Max Unit V -2.8 -1 -1 -2 -2 -2 10 000 -2.5 V MHz µs µs µs mA mA

V mA

Emitter-base cutoff current (Collector open) Forward current transfer ratio

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE2 R 1 000 to 2 500 Q P

2 000 to 5 000 4 000 to 10 000 Note) The part numbers in the parenthesis show conventional part number.

Publication date: April 2003

SJD00028BED

1

2SB0949, 2SB0949A
PC Ta
50

IC VCE
-5
-10
TC=25°C

IC VBE
VCE=­4V

Collector power dissipation PC (W)

40

Collector current IC (A)

30

-3

Collector current IC (A)

(1)TC=Ta (2)With a 100×100×2mm Al heat sink (3)With a 50×50×2mm Al heat sink (4)Without heat sink (PC=2W)

-4

IB=­2.0mA ­1.8mA ­1.6mA ­1.4mA ­1.2mA ­1.0mA ­0.8mA ­0.6mA

-8

-6
25°C

20

(1)

-2

4.0mA

-4

TC=100°C

­25°C

10 (3) (4) 0 0 40

(2)

-1

­0.2mA ­0.1mA

-2

80

120

160

0

0

-1

-2

-3

-4

-5

0

0

- 0.8

-1.6

-2.4

-3.2

Ambient temperature Ta (°C)

Collector-emitter voltage VCE (V)

Base-emitter voltage VBE (V)

VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
-100
IC/IB=250

hFE IC
VCE=­4V

Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
104
IE=0 f=1MHz TC=25°C

105

Forward current transfer ratio hFE

-10

104

TC=100°C

25°C

103

­25°C

-1

TC=100°C ­25°C 25°C

103

102

- 0.1

102

10

- 0.01 - 0.01

- 0.1

-1

-10

10 - 0.01

- 0.1

-1

-10

1 - 0.1

-1

-10

-100

Collector current IC (A)

Collector current IC (A)

Collector-base voltage VCB (V)

Safe operation area
-100
Non repetitive pulse TC=25°C

Rth t
103 (1)Without heat sink (2)With a 100×100×2mm Al heat sink (1)

Thermal resistance Rth (°C/W)

Collector current IC (A)

-10
ICP t=1ms IC DC

102

10

(2)

-1

t=10ms

1

- 0.1
2SB0949A 2SB0949

10-1

- 0.01 -1

-10

-100

-1 000

10-2 10-4

10-3

10-2

10-1

1

10

102

103

104

Collector-emitter voltage VCE (V)

Time t (s)

2

SJD00028BED



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