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Part: 2SB952A
Category:
Discrete
-> Transistors
-> Bipolar
-> Power
-> General Purpose
Description: V<SUB>CEO</SUB>(V) = -40 ;; I<SUB>C</SUB>(A) = -7 ;; HFE(min) = 45 ;; HFE(max) = ;; Package = N-A1N-G1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SB952A datasheet File size : 178 kB
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Datasheet text preview:
Power Transistors
2SB0952 (2SB952), 2SB0952A (2SB952A)
Silicon PNP epitaxial planar type
For low-voltage switching
Unit: mm
Features
· Low collector-emitter saturation voltage VCE(sat) · High-speed switching · N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment
10.0±0.3 1 . 5± 0 . 1
8.5±0.2 6.0±0.2
3.4±0.3 1.0±0.1
4.4±0.5
Parameter Collector-base voltage (Emitter open) 2SB0952 2SB0952A
Symbol V CBO V CEO V EBO IC ICP PC Tj Tstg Ta = 25°C
Rating -4 0 -5 0 -2 0 -4 0 -5 -7 -1 2 30 1.3 150 -55 to +150
Unit V
2.0±0.5
Absolute Maximum Ratings TC = 25°C
Collector-emitter voltage 2SB0952 (Base open) 2SB0952A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
V
(6.5)
V A A W °C °C
1: Base 2: Collector 3: Emitter N-G1 Package
Note) Self-supported type package is also prepared.
Electrical Characteristics TC = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) 2SB0952 2SB0952A 2SB0952 2SB0952A IEBO h FE1 hF E 2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Turn-on time Storage time Fall time
*
Symbol V CEO ICBO
Conditions IC = -10 mA, IB = 0 VCB = -40 V, IE = 0 VCB = -50 V, IE = 0 VEB = -5 V, IC = 0 VCE = -2 V, IC = - 0.1 A VCE = -2 V, IC = -2 A IC = -5 A, IB = - 0.16 A IC = -5 A, IB = - 0.16 A VCE = -10 V, IC = - 0.5 A, f = 10 MHz VCB = -10 V, IE = 0, f = 1 MHz IC = -2 A IB1 = -66 mA, IB2 = 66 mA VCC = -20 V
Min -2 0 -4 0
Typ
Max
(7.6)
Unit V
-5 0 -5 0 -5 0 45 60 260 - 0.6 -1.5 150 140 0.1 0.5 0.1
µA µA V V MHz MHz µs µs µs
Emitter-base cutoff current (Collector open) Forward current transfer ratio
V CE(sat) V BE(sat) fT Co b to n tstg tf
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE2 R 60 to 120 Q 90 to 180 P 130 to 260
Note) The part numbers in the parenthesis show conventional part number.
Publication date: March 2003 SJD00031AED
(1.5)
1
2
0.8±0.1 R = 0.5 R = 0.5 2.54±0.3 1.0±0.1 1.4±0.1 0.4±0.1 5.08±0.5 (8.5) (6.0) 1.3 3
4.4±0.5
0 to 0.4
14.4±0.5
04 3.0+0..2
0 1.5+0.4
1
2SB0952, 2SB0952A
PC Ta
40
IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
-6
IB=60mA
VCE(sat) IC
-10
TC=25°C
IC/IB=30 TC=100°C 25°C
Collector power dissipation PC (W)
Collector current IC (A)
30
(1)
(1)TC=Ta (2)With a 50×50×2mm Al heat sink (3)Without heat sink (PC=1.3W)
-5
50mA 45mA 40mA 35mA 30mA
-4
-1
25°C
20
-3
25mA 20mA
-2
15mA 10mA
- 0.1
10 (2) (3) 0 0 40 80 120 160
-1
5mA
0
0
-1
-2
-3
-4
-5
-6
- 0.01 - 0.1
-1
-10
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) IC
-10 104
IC/IB=30
hFE IC
VCE=2V
fT I C
104
VCE=10V f=10MHz TC=25°C
Base-emitter saturation voltage VBE(sat) (V)
Forward current transfer ratio hFE
Transition frequency fT (MHz)
103
TC=100°C 25°C
103
-1
TC=25°C 100°C
25°C
102
25°C
102
- 0.1
10
10
- 0.01 - 0.1
-1
-10
1 - 0.1
-1
-10
-100
1 - 0.01
- 0.1
-1
-10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Cob VCB
Turn-on time ton , Storage time tstg , Fall time tf (µs)
ton, tstg, tf IC
IE=0 f=1MHz TC=25°C
Safe operation area
-100
Non repetitive pulse TC=25°C ICP IC t=10ms t=1ms
Collector output capacitance C (pF) (Common base, input open circuited) ob
104
-10
Pulsed tw=1ms Duty cycle=1% IC/IB=30 (IB1=IB2) VCC=20V TC=25°C
-1
tstg ton tf
Collector current IC (A)
103
-10
102
-1
t=300ms
- 0.1
10
- 0.1
2SB0952A 2SB0952
1 - 0.1
-1
-10
-100
- 0.01
0
-2
-4
-6
-8
- 0.01 - 0.1
-1
-10
-100
Collector-base voltage VCB (V)
Collector current IC (A)
Collector-emitter voltage VCE (V)
2
SJD00031AED
2SB0952, 2SB0952A
Rth t
103 (1)Without heat sink (2)With a 50 mm × 50 mm × 2 mm Al heat sink (1) (2) 10
Thermal resistance Rth (°C/W)
102
1
10-1
10-2 10-4
10-3
10-2
10-1
1
10
102
103
104
Time t (s)
SJD00031AED
3
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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