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Part: 2SC0829
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> High-Frequency Amplifiers
Description: V<SUB>CEO</SUB>(V) = 20 ;; I<SUB>C</SUB>(A) = 0.03 ;; HFE(min) = 70 ;; HFE(max) = 250 ;; Package = TO-92-A1TO-92-B1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SC0829 datasheet File size : 224 kB
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Datasheet text preview:
Transistors
2SC0829 (2SC829)
Silicon NPN epitaxial planar type
For high-frequency amplification
5.0±0.2
Unit: mm
4.0±0.2
· Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios
0.7±0.1
0.7±0.2 12.9±0.5
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO IC PC Tj Tstg Rating 30 20 5 30 400 150 -55 to +150 Unit V V V
2.3±0.2
01 0.45+0..15 06 2.5+0..2
5.1±0.2
01 0.45+0..15 06 2.5+0..2
Features
mA mW °C °C
1
23
1: Emitter 2: Collector 3: Base TO-92-B1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Forward current transfer ratio * Transition frequency Reverse transfer capacitance (Common emitter) Reverse transfer impedance Symbol V CBO V CEO V EBO h FE fT C re Zr b Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 IE = 10 µA, IC = 0 VCE = 10 V, IC = 1 mA VCB = 10 V, IE = -1 mA, f = 200 MHz VCB = 10 V, IE = -1 mA, f = 10.7 MHz VCB = 10 V, IE = -1 mA, f = 2 MHz Min 30 20 5 70 150 230 1.3 1.6 60 250 Typ Max Unit V V V MHz pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank h FE B 70 to 160 C 110 to 250
Note) The part number in the parenthesis shows conventional part number.
Publication date: March 2003 SJC00098CED
1
2SC0829
PC Ta
500
IC VCE
12 IB = 100 µA Ta = 25°C
IC VBE
60 VCE = 10 V
Collector power dissipation PC (mW)
400
10
50
Collector current IC (mA)
Collector current IC (mA)
80 µA 8 60 µA 6 40 µA
40 25°C 30 Ta = 75°C -25°C
300
200
4
20
100
2
20 µA
10
0
0
40
80
120
160
0
0
4
8
12
16
0
0
0.4
0.8
1.2
1.6
2.0
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
I B VB E
Collector-emitter saturation voltage VCE(sat) (V)
120 VCE = 10 V Ta = 25°C
VCE(sat) IC
100 IC / IB = 10
hFE IC
300 VCE = 10 V
Base current IB (µA)
10
Forward current transfer ratio hFE
100
250 Ta = 75°C 200 25°C 150 -25°C
80
60
1 Ta = 75°C -25°C
40
25°C 0.1
100
20
50
0
0
0.4
0.8
1.2
1.6
0.01 0.1
1
10
100
0 0.1
1
10
100
Base-emitter voltage VBE (V)
Collector current IC (mA)
Collector current IC (mA)
fT I E
600 Ta = 25°C
80 70 60 50 40 30 20 10 0 - 0.1
Zrb IE
f = 2 MHz Ta = 25°C
Cre VCE
2.4
Transition frequency fT (MHz)
500
Reverse transfer capacitance Cre (pF) (Common emitter)
Reverse transfer impedance Zrb ()
2.0
IC = 1 mA f = 10.7 MHz Ta = 25°C
400 VCB = 10 V 6V 200
1.6
300
1.2
VC B = 6 V 10 V
0.8
100
0.4
0 - 0.1
-1
-10
-100
-1
-10
0 0.1
1
10
100
Emitter current IE (mA)
Emitter current IE (mA)
Collector-emitter voltage VCE (V)
2
SJC00098CED
2SC0829
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1 10 100 IE = -1 mA f = 1 MHz Ta = 25°C 12
bie gie
Reverse transfer susceptance bre (mS)
yie = gie + jbie VCE = 10 V
0
bre gre
100
yre = gre + jbre VCE = 10 V f = 0.45 MHz 10.7 25
10
- 0.5
Input susceptance bie (mS)
8
58
-1.0
58 - 0.4 mA -1 mA -2 mA -4 mA
6
25 10.7 IE = - 0.4 mA -1 mA -2 mA -4 mA -7 mA f = 0.45 MHz 0 4 8 12 16 20
-1.5
4
-2.0
2
-2.5
100 IE = -7 mA - 0.4 - 0.3 - 0.2 - 0.1
-3.0 - 0.5
0
Collector-base voltage VCB (V)
Input conductance gie (mS)
Reverse transfer conductance gre (mS)
bfe gfe
0
boe goe
0.45 10.7 -4 mA
- 0.1 mA
Forward transfer susceptance bfe (mS)
-40
100 100 100
58 58
25
Output susceptance boe (mS)
-20
0.45 10.7 25 -1 mA 100 58 - 0.4 mA
1.2 100 1.0 -7 mA -4 mA -2 mA -1 mA - 0.4 mA 25 0.4 10.7 0.2 IE = - 0.1 mA
-2 mA
0.8 58 0.6
25 -60 58 IE = -7 mA
f = 10.7 MHz
-80
-100
yfe = gfe + jbfe VCE = 10 V
-120
0
0 20 40 60 80 100
f = 0.45 MHz 0 0.2 0.4
yoe = goe + jboe VCE = 10 V 0.6 0.8 1.0
Forward transfer conductance gfe (mS)
Output conductance goe (mS)
SJC00098CED
3
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