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Part: 2SC2188
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> High-Frequency Amplifiers
Description: V<SUB>CEO</SUB>(V) = 35 ;; I<SUB>C</SUB>(A) = 0.05 ;; HFE(min) = 20 ;; HFE(max) = 100 ;; Package = M-A1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SC2188 datasheet File size : 133 kB
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Datasheet text preview:
Transistors
2SC2188
Silicon NPN epitaxial planar type
For intermediate frequency amplification of TV image
6.9±0.1
(0.4)
Unit: mm
2.5±0.1 (1.0)
(1.0) 3.5±0.1 2.0±0.2 2.4±0.2
Features
· High transition frequency fT · Satisfactory linearity of forward current transfer ratio hFE · M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board
(1.5) (1.5)
R 0.9 R 0.7
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO IC PC Tj Tstg Rating 45 35 4 50 600 150 -55 to +150 Unit V V V mA mW °C °C
3
1.0±0.1
(0.85)
1.25±0.05
0.45±0.05
0.55±0.1
2 (2.5)
1
(2.5)
1: Base 2: Collector 3: Emitter M-A1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-emitter cutoff current (Base open) Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Reverse transfer capacitance (Common emitter) Power gain Symbol V CBO V CEO V EBO ICEO h FE V CE(sat) fT C re GP Conditions IC = 10 µA, IE = 0 IC = 1 mA, IB = 0 IE = 10 µA, IC = 0 VCE = 20 V, IB = 0 VCB = 10 V, IE = -10 mA IC = 20 mA, IB = 2 mA VCB = 10 V, IE = -10 mA, f = 100 MHz VCB = 10 V, IE = -1 mA, f = 10.7 MHz VCB = 10 V, IE = -10 mA, f = 58 MHz 18 300 500 1.5 20 50 Min 45 35 4 10 100 0.5 Typ Max Unit V V V µA V MHz pF dB
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
4.1±0.2
4.5±0.1
Publication date: February 2003
SJC00110BED
1
2SC2188
PC Ta
800
80 IB = 2.0 mA 1.8 mA
IC VCE
60
IC VBE
25°C VCE = 10 V
Collector power dissipation PC (mW)
50
Collector current IC (mA)
600
60 1.6 mA 1.4 mA 40 1.2 mA 1.0 mA 0.8 mA 20 0.6 mA 0.4 mA 0.2 mA
Collector current IC (mA)
Ta = 75°C
-25°C
40
400
30
20
200
10
0
0
40
80
120
160
0
0
0
2
4
6
8
10
0
0.4
0.8
1.2
1.6
2.0
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10
hFE IC
120 VCE = 10 V
600 VCB = 10 V Ta = 25°C
fT I E
Forward current transfer ratio hFE
10
80 Ta = 75°C 60 25°C -25°C
Transition frequency fT (MHz)
100
500
400
1 Ta = 75°C -25°C
300
25°C 0.1
40
200
20
100
0.01 0.1
1
10
100
0 0.1
1
10
100
0 - 0.1
-1
-10
-100
Collector current IC (mA)
Collector current IC (mA)
Emitter current IE (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
3.0
Cre VCE
Reverse transfer capacitance Cre (pF) (Common emitter)
IE = 0 f = 1 MHz Ta = 25°C
GP IE
30 VCB = 10 V f = 58 MHz Ta = 25°C
2.4
2.5
2.0
IC = 1 mA f = 10.7 MHz Ta = 25°C
25
Power gain GP (dB)
2.0
1.6
20
1.5
1.2
15
1.0
0.8
10
0.5
0.4
5
0
1
10
100
0
1
10
100
0 - 0.1
-1
-10
-100
Collector-base voltage VCB (V)
Collector-emitter voltage VCE (V)
Emitter current IE (mA)
2
SJC00110BED
Others parts begin by 2s
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