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Part: 2SC3187
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: V<SUB>CEO</SUB>(V) = 300 ;; I<SUB>C</SUB>(A) = 0.1 ;; HFE(min) = 50 ;; HFE(max) = 250 ;; Package = TO-92-B1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SC3187 datasheet File size : 195 kB
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Datasheet text preview:
Transistors
2SC3187
Silicon NPN triple diffusion planar type
For small TV video output
5.0±0.2
Unit: mm
4.0±0.2
0.7±0.1
0.7±0.2 12.9±0.5
· High collector-emitter voltage (Base open) VCEO · Small collector output capacitance (Common base, input open circuited) C o b
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO IC ICP PC Tj Tstg Rating 300 300 7 100 200 750 150 -55 to +150 Unit V V V mA mA mW °C °C
01 0.45+0..15 06 2.5+0..2
5.1±0.2
01 0.45+0..15 06 2.5+0..2
Features
1
23
1: Emitter 2: Collector 3: Base EIAJ: SC-43A TO-92-B1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Base-emitter voltage Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Symbol V CBO V CEO V EBO VBE h FE V CE(sat) fT Co b Conditions IC = 10 µA, IE = 0 IC = 100 µA, IB = 0 IE = 10 µA, IC = 0 VCE = 10 V, IC = 30 mA VCE = 50 V, IC = 5 mA IC = 30 mA, IB = 3 mA VCB = 30 V, IE = -20 mA, f = 200 MHz VCB = 30 V, IE = 0, f = 1 MHz 70 140 1.9 50 Min 300 300 7 1.2 250 1.5 Typ Max Unit V V V V V MHz pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.3±0.2
Publication date: March 2003
SJC00126BED
1
2SC3187
PC Ta
1.0
120 IB = 2.0 mA
IC VCE
Ta = 25°C 1.6 mA 1.2 mA 1.0 mA 0.8 mA 0.6 mA 60 0.4 mA 40 0.2 mA 20
240
IC VBE
VCE = 5 V 25°C Ta = 75°C 160 -25°C
Collector power dissipation PC (W)
0.8
100
200
Collector current IC (mA)
80
0.6
Collector current IC (mA)
120
0.4
80
0.2
40
0
0
0
40
80
120
160
0
10
20
30
40
50
60
0
0
0.4
0.8
1.2
1.6
2.0
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10
240
hFE IC
VCE = 50 V Ta = 75°C
240
fT I E
VCB = 30 V Ta = 25°C
Forward current transfer ratio hFE
10 Ta = 75°C 1 25°C -25°C
25°C 160 -25°C 120
Transition frequency fT (MHz)
200
200
160
120
80
80
0.1
40
40
0.01
1
10
100
1 000
0
1
10
100
1 000
0 -1
-10
-100
Collector current IC (mA)
Collector current IC (mA)
Emitter current IE (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
10 IE = 0 f = 1 MHz Ta = 25°C
1 000
Safe operation area
Single pulse Ta = 25°C ICP t = 2.0 ms IC t=1s
8
Collector current IC (mA)
1 10 100 1 000
100
6
10
4
1
2
0
0.1
1
10
100
1 000
Collector-base voltage VCB (V)
Collector-emitter voltage VCE (V)
2
SJC00126BED
Others parts begin by 2s
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