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Part: 2SC3929
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: V<SUB>CEO</SUB>(V) = 35 ;; I<SUB>C</SUB>(A) = 0.05 ;; HFE(min) = 180 ;; HFE(max) = 700 ;; Package = SMini3-G1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SC3929 datasheet File size : 172 kB
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Datasheet text preview:
Transistors
2SC3929, 2SC3929A
Silicon NPN epitaxial planar type
(0.425)
For low-frequency output amplification Complementary to 2SA1531 and 2SA1531A Features
· Low noise voltage NV · High forward current transfer ratio hFE · S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing
Unit: mm
01 0.3+0..0 0 10 0.15+0..05
3 1.25±0.10 2.1±0.1 5° 1 2 0.2±0.1 0.9±0.1
02 0.9+0..1
(0.65) (0.65) 1.3±0.1 2.0±0.2
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SC3929 2SC3929A V CEO V EBO IC ICP PC Tj Tstg Symbol V CBO Rating 35 55 35 55 5 50 100 150 150 -55 to +150 V mA mA mW °C °C V Unit V
10°
Collector-emitter voltage 2SC3929 (Base open) 2SC3929A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
1: Base 2: Emitter 3: Collector EIAJ: SC-70 SMini3-G1 Package
Marking Symbol: · 2SC3929: S · 2SC3929A: T
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) 2SC3929 2SC3929A 2SC3929 2SC3929A V EBO VBE ICBO ICEO h FE V CE(sat) fT NV IE = 10 µA, IC = 0 VCE = 1 V, IC = 100 mA VCB = 10 V, IE = 0 VCE = 10 V, IB = 0 VCE = 5 V, IC = 2 mA IC = 100 mA, IB = 10 mA VCB = 5 V, IE = -2 mA, f = 200 MHz VCE = 10 V, IC = 1 mA, GV = 80 dB Rg = 100 k, Function = FLAT 100 150 180 V CEO IC = 2 mA, IB = 0 Symbol V CBO Conditions IC = 10 µA, IE = 0 Min 35 55 35 55 5 0.7 1.0 0.1 1 700 0.6 V V µA µA V MHz mV V Typ Max Unit V
Emitter-base voltage (Collector open) Base-emitter voltage Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio
*
Collector-emitter saturation voltage Transition frequency Noise voltage
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE Marking symbol 2SC3929 2SC3929A R 180 to 360 SR TR S 260 to 520 SS TS T 360 to 700 ST TT
0 to 0.1
Publication date: March 2003
SJC00140CED
1
2SC3929, 2SC3929A
PC Ta
240
IC VCE
160 140 Ta = 25°C
160
IC I B
VCE = 5 V Ta = 25°C
Collector power dissipation PC (mW)
200
Collector current IC (mA)
120 100
Collector current IC (mA)
IB = 350 µA 300 µA 250 µA
120
160
120
80 60 40 20 0
200 µA 150 µA 100 µA 50 µA
80
80
40
40
0
0
40
80
120
160
0
4
8
12
0
0
0.1
0.2
0.3
0.4
0.5
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Base current IB (mA)
I C VB E
25°C 100 Ta = 75°C -25°C VCE = 5 V
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10
720
hFE IC
VCE = 5 V
120
Forward current transfer ratio hFE
600 Ta = 75°C 480 25°C -25°C
Collector current IC (mA)
10
80
60
1
360
40
0.1
25°C
Ta = 75°C 25°C
240
20
120
0
0
0.4
0.8
1.2
1.6
2.0
0.01 0.1
1
10
100
0 0.1
1
10
100
Base-emitter voltage VBE (V)
Collector current IC (mA)
Collector current IC (mA)
fT I E
Collector output capacitance C (pF) (Common base, input open circuited) ob
500 VCB = 5 V Ta = 25°C
Cob VCB
20
NV VCE
160
IE = 0 f = 1 MHz Ta = 25°C
Transition frequency fT (MHz)
400
16
IC = 1 mA GV = 80 dB Function = FLAT
Noise voltage NV (mV)
120
Rg = 100 k
300
12
80 22 k 40 4.7 k
200
8
100
4
0 - 0.1
-1
-10
-100
0 0.1
0
1 10 100
1
10
100
Emitter current IE (mA)
Collector-base voltage VCB (V)
Collector-emitter voltage VCE (V)
2
SJC00140CED
2SC3929, 2SC3929A
NV VCE
300 Rg = 100 k 240
NV IC
160 VCE = 10 V GV = 80 dB Function = FLAT
300
NV IC
VCE = 10 V GV = 80 dB Function = RIAA
Noise voltage NV (mV)
Noise voltage NV (mV)
Noise voltage NV (mV)
IC = 1 mA GV = 80 dB Function = RIAA
240
120
180
180
80
Rg = 100 k
120 22 k 60 4.7 k 0
120
Rg = 100 k 22 k 4.7 k
22 k 40 4.7 k
60
1
10
100
0 0.01
0.1
1
0 0.01
0.1
1
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
NV Rg
160 VCE = 10 V GV = 80 dB Function = FLAT
300
NV Rg
VCE = 10 V GV = 80 dB Function = RIAA
240
Noise voltage NV (mV)
Noise voltage NV (mV)
120
180 IC = 1 mA 120 0.5 mA 60 0.1 mA
80
IC = 1 mA 0.5 mA
40 0.1 mA
0
0
1
10
100
1
10
100
Signal source resistance Rg (k)
Signal source resistance Rg (k)
SJC00140CED
3
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