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Part: 2SC3932
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> High-Frequency for Tuners
Description: V<SUB>CEO</SUB>(V) = 20 ;; I<SUB>C</SUB>(A) = 0.05 ;; HFE(min) = 25 ;; HFE(max) = 250 ;; Package = SMini3-G1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SC3932 datasheet File size : 172 kB
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Datasheet text preview:
Transistors
2SC3932
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
(0.425)
01 0.3+0..0
Unit: mm
0 10 0.15+0..05
Features
· High transition frequency fT · S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing
3
1.25±0.10
2.1±0.1 5°
1
2
(0.65) (0.65) 1.3±0.1
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO IC PC Tj Tstg Rating 30 20 3 50 150 150 -55 to +150 Unit V V V mA mW °C °C
10°
2.0±0.2
0.9±0.1
02 0.9+0..1
1: Base 2: Emitter 3: Collector EIAJ: SC-70 SMini3-G1 Package
Marking Symbol: R
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Emitter-base voltage (Collector open) Base-emitter voltage Forward current transfer ratio * Transition frequency Reverse transfer capacitance (Common base) Reverse transfer capacitance (Common emitter) Power gain Symbol V CBO V EBO VBE h FE fT Crb C re GP Conditions IC = 100 µA, IE = 0 IE = 10 µA, IC = 0 VCB = 10 V, IE = -2 mA VCB = 10 V, IE = -2 mA VCB = 10 V, IE = -15 mA, f = 200 MHz VCE = 6 V, IC = 0, f = 1 MHz VCB = 10 V, IE = -1 mA, f = 10.7 MHz VCB = 10 V, IE = -1 mA, f = 200 MHz 25 800 0.8 1.0 20 1.5 Min 30 3 720 250 1 600 Typ Max Unit V V mV MHz pF pF dB
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank h FE Marking symbol T 800 to 1 400 RT S 1 000 to 1 600 RS No-rank 800 to 1 600 R
Product of no-rank is not classified and have no indication for rank.
0 to 0.1
0.2±0.1
Publication date: March 2003
SJC00143BED
1
2SC3932
PC Ta
240
IC VCE
24 IB = 300 µA Ta = 25°C
24
IC I B
VCE = 10 V Ta = 25°C 20
Collector power dissipation PC (mW)
200
20
Collector current IC (mA)
160
16 200 µA 12 150 µA 100 µA 50 µA
Collector current IC (mA)
250 µA
16
120
12
80
8
8
40
4
4
0
0
0 40 80 120 160
0
4
8
12
16
0
0
100
200
300
400
500
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Base current IB (µA)
I B VB E
400 VCE = 10 V Ta = 25°C
60
IC VBE
25°C 50 Ta = 75°C VCE = 10 V -25°C
hFE IC
240 VCE = 10 V
Collector current IC (mA)
300
40
Forward current transfer ratio hFE
200
Base current IB (µA)
160 Ta = 75°C 120 25°C -25°C
200
30
20
80
100
10
40
0
0
0.4
0.8
1.2
1.6
2.0
0
0
0.4
0.8
1.2
1.6
2.0
0 0.1
1
10
100
Base-emitter voltage VBE (V)
Base-emitter voltage VBE (V)
Collector current IC (mA)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10
fT I E
1 600
Cre VCE
Reverse transfer capacitance Cre (pF) (Common emitter)
VCB = 10 V Ta = 25°C
2.4 IC = 1 mA f = 10.7 MHz Ta = 25°C
10
Transition frequency fT (MHz)
2.0
1 200
1.6
1
800
1.2
Ta = 75°C 0.1 25°C 25°C
0.8
400
0.4
0.01 0.1
1
10
100
0 - 0.1
-1
-10
-100
0 0.1
1
10
100
Collector current IC (mA)
Emitter current IE (mA)
Collector-emitter voltage VCE (V)
2
SJC00143BED
2SC3932
Zrb IE
120 VCB = 10 V f = 2 MHz Ta = 25°C
GP IE
40 VCB = 10 V f = 100 MHz Rg = 50 Ta = 25°C
12
NF IE
VCB = 10 V f = 100 MHz Rg = 50 k Ta = 25°C
Reverse transfer impedance Zrb ()
100
10
30
80
Noise figure NF (dB)
-1 -10 -100
Power gain GP (dB)
8
60
20
6
40
4
10
20
2
0 - 0.1
-1
-10
0 - 0.1
0 - 0.1
-1
-10
-100
Emitter current IE (mA)
Emitter current IE (mA)
Emitter current IE (mA)
bib gib
0
brb grb
0
bfb gfb
48
Reverse transfer susceptance brb (mS)
-10
- 0.4
300 500
Forward transfer susceptance bfb (mS)
yib = gib + jbib VCB = 10 V
yrb = grb + jbrb VCB = 10 V
200
40
yfb = gfb + jbfb VCB = 10 V f = 200 MHz IE = -5 mA 32 -2 mA 300 500 600 16 900
Input susceptance bib (mS)
-20
IE = -2 mA f = 900 MHz -5 mA
- 0.8 600 -1.2 f = 900 MHz -2 mA IE = -5 mA
-30
600 500 300 200
24
-40
-1.6
-50
-2.0
8
-60
0
10
20
30
40
50
-2.4 -1.0
- 0.8
- 0.6
- 0.4
- 0.2
0
0 -60
-40
-20
0
20
40
Input conductance gib (mS)
Reverse transfer conductance grb (mS)
Forward transfer conductance gfb (mS)
bob gob
12 yob = gob + jbob VCE = 10 V 10 900
Output susceptance bob (mS)
8
600 IE = -2 mA 500 -5 mA
6
4
300
2
f = 200 MHz
0
0
0.4
0.8
1.2
1.6
2.0
Output conductance gob (mS)
SJC00143BED
3
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