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Part: 2SC3934
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> High-Frequency for Tuners
Description: V<SUB>CEO</SUB>(V) = 12 ;; I<SUB>C</SUB>(A) = 0.03 ;; HFE(min) = 40 ;; HFE(max) = ;; Package = SMini3-G1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SC3934 datasheet File size : 172 kB
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Datasheet text preview:
Transistors
2SC3934
Silicon NPN epitaxial planar type
For high-frequency wide-band low-noise amplification
(0.425)
01 0.3+0..0
Unit: mm
0 10 0.15+0..05
Features
· High transition frequency fT · S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing
3 1.25±0.10 2.1±0.1 5° 1 2 0.2±0.1 0.9±0.1
02 0.9+0..1
(0.65) (0.65) 1.3±0.1
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO IC I CP PC Tj Tstg Rating 15 12 2.5 30 50 150 150 -55 to +150 Unit V V V mA mA mW °C °C
10°
2.0±0.2
1: Base 2: Emitter 3: Collector EIAJ: SC-70 SMini3-G1 Package
Marking Symbol: 1U
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Transition frequency Collector output capacitance (Common base, input open circuited) Forward transfer gain Maximum unilateral power gain Noise figure Symbol ICBO IEBO h FE fT Co b S21e2 GU M NF Conditions VCB = 10 V, IE = 0 VEB = 2 V, IC = 0 VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 10 mA, f = 0.8 GHz VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IC = 20 mA, f = 0.8 GHz VCE = 10 V, IC = 20 mA, f = 0.8 GHz VCE = 10 V, IC = 5 mA, f = 0.8 GHz 9 12 12 14 1.3 2.5 40 4.5 1.2 Min Typ Max 100 1 Unit nA µA GHz pF dB dB dB
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
0 to 0.1
Publication date: February 2003
SJC00144BED
1
2SC3934
PC Ta
200
30
IC VCE
Ta = 25°C
IC VBE
60 25°C Ta = 75°C 40 -25°C VCE = 10 V
Collector power dissipation PC (mW)
160
25
50
IB = 300 µA
Collector current IC (mA)
20 250 µA 200 µA 10 150 µA 100 µA 50 µA
120
Collector current IC (mA)
15
30
80
20
40
5
10
0
0
40
80
120
160
0
0
2
4
6
8
10
12
0
0
0.4
0.8
1.2
1.6
2.0
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10
240
hFE IC
VCE = 10 V
fT I C
8 Ta = 25°C VCE = 10 V
Forward current transfer ratio hFE
10
Transition frequency fT (GHz)
10 100
200
6
160 Ta = 75°C 120 25°C 80 -25°C 40
1
4
0.1
25°C
Ta = 75°C
2
-25°C 0.01 0.1 1 10 100
0 0.1 1
0
1
10
100
Collector current IC (mA)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
1.2 IE = 0 f = 1 MHz Ta = 25°C
NF IC
8 Rg = 50 VCE = 10 V f = 800 MHz
0.8 0.4 0.2
S1 1 , S 2 2
1 1.5 2 VCE = 10 V IC = 20 mA E : Earth 3 4 5 10
1.0
0.8
0.6
Noise figure NF (dB)
6
4
0 .2 .4 .6 .8 1
800 MHz 500 MHz
1.5 2
1 000 MHz
345 S22
800 MHz 500 MHz
10 -10 -5 -4
1 000 MHz
0.4
S11
2
0.2
- 0.2 - 0.4 -3 - 0.6 -2 - 0.8 -1 -1.5
0
1
10
100
0
1
10
100
Collector-base voltage VCB (V)
Collector current IC (mA)
2
SJC00144BED
2SC3934
S1 1 , S 2 2
+90° +120° S2 1 500 MHz 800 MHz 1 000 MHz S 500 MHz 12 ±180° -10 -15 -20 -25 -30 0° +60° 1 000 MHz 800 MHz VCE = 10 V IC = 20 mA E : Earth +30°
+150°
5
10
15
20
-150°
-30°
-120° -90°
-60°
SJC00144BED
3
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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