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Part: 2SC3937
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> High-Frequency for Tuners
Description: V<SUB>CEO</SUB>(V) = 10 ;; I<SUB>C</SUB>(A) = 0.08 ;; HFE(min) = 50 ;; HFE(max) = 300 ;; Package = SMini3-G1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SC3937 datasheet File size : 172 kB
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Datasheet text preview:
Transistors
2SC3937
Silicon NPN epitaxial planar type
For UHF band low-noise amplification
(0.425)
01 0.3+0..0
Unit: mm
0 10 0.15+0..05
Features
· Low noise figure NF · High forward transfer gain S21e2 · High transition frequency fT · S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing
3 1.25±0.10 2.1±0.1 5° 1 2 0.2±0.1 0.9±0.1
02 0.9+0..1
(0.65) (0.65) 1.3±0.1 2.0±0.2
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO IC PC Tj Tstg Rating 15 10 2 80 150 150 -55 to +150 Unit V V V mA mW °C °C
10°
1: Base 2: Emitter 3: Collector EIAJ: SC-70 SMini3-G1 Package
Marking Symbol: 2W
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol ICBO IEBO h FE1 h FE2 Transition frequency Collector output capacitance (Common base, input open circuited) Forward transfer gain Maximum unilateral power gain Noise figure fT Co b S21e2 GU M NF Conditions VCB = 15 V, IE = 0 VEB = 1 V, IC = 0 VCE = 8 V, IC = 20 mA VCE = 1 V, IC = 3 mA VCE = 8 V, IC = 20 mA, f = 0.8 GHz VCB = 10 V, IE = 0, f = 1 MHz VCE = 8 V, IC = 20 mA, f = 0.8 GHz VCE = 8 V, IC = 20 mA, f = 0.8 GHz VCE = 8 V, IC = 7 mA, f = 0.8 GHz 50 80 6 0.7 13 14 1.0 1.7 1.2 Min Typ Max 1 1 300 280 GHz pF dB dB dB Unit µA µA
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
0 to 0.1
Publication date: February 2003
SJC00147BED
1
2SC3937
PC Ta
200
60
IC VCE
IB = 400 µA Ta = 25°C 350 µA
IC VBE
120 VCE = 8 V
Collector power dissipation PC (mW)
Collector current IC (mA)
160
50
100
Collector current IC (mA)
300 µA 40 250 µA 200 µA 150 µA 20 100 µA 50 µA
80
25°C Ta = 75°C -25°C
120
30
60
80
40
40
10
20
0
0
0
40
80
120
160
0
2
4
6
8
10
12
0
0
0.4
0.8
1.2
1.6
2.0
Ambient temperature Ta (°C)
Collector-emitter voltage VCE
(V)
Base-emitter voltage VBE (V)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10
hFE IC
600 VCE = 8 V
12
fT I C
VCE = 8 V f = 800 MHz Ta = 25°C
Forward current transfer ratio hFE
10
400 Ta = 75°C 300 25°C 200 -25°C 100
Transition frequency fT (GHz)
100
500
10
8
1
6
Ta = 75°C, 25°C, -25°C 0.1
4
2
0.01 0.1
1
10
100
0 0.1
1
10
0 0.1
1
10
100
Collector current IC (mA)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
2.4
GUM IC
Maximum unilateral power gain GUM (dB)
IE = 0 f = 1 MHz Ta = 25°C
NF IC
VCE = 8 V f = 800 MHz Ta = 25°C 6 VCE = 8 V (Rg = 50 ) f = 800 MHz Ta = 25°C
24
2.0
20
5
1.6
16
Noise figure NF (dB)
1 10 100
4
1.2
12
3
0.8
8
2
0.4
4
1
0 0.1
1
10
100
0 0.1
0 0.1
1
10
100
Collector-base voltage VCB (V)
Collector current IC (mA)
Collector current IC (mA)
2
SJC00147BED
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