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Part: 2SC3940
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: V<SUB>CEO</SUB>(V) = 25 ;; I<SUB>C</SUB>(A) = 1 ;; HFE(min) = 85 ;; HFE(max) = 340 ;; Package = TO-92NL-A1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SC3940 datasheet File size : 172 kB
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Datasheet text preview:
Transistors
2SC3940, 2SC3940A
Silicon NPN epitaxial planar type
Unit: mm
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SC3940 2SC3940A V CEO V EBO IC ICP PC Tj Tstg Symbol V CBO Rating 30 60 25 50 5 1 1.5 1 150 -55 to +150 V A A W °C °C V Unit V
02 0.45+0..1
13.5±0.5
· Low collector-emitter saturation voltage VCE(sat) · Allowing supply with the radial taping
0.7±0.2
Features
0.7±0.1
8.0±0.2
For low-frequency output amplification and driver amplification Complementary to 2SA1534, 2SA1534A
5.0±0.2
4.0±0.2
01 0.45+0..15
Collector-emitter voltage 2SC3940 (Base open) 2SC3940A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
123
1: Emitter 2: Collector 2.54±0.15 3: Base TO-92NL-A1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) 2SC3940 2SC3940A 2SC3940 2SC3940A V EBO ICBO h FE1 * 2 h FE2 Collector-emitter saturation voltage*1 Base-emitter saturation Transition frequency Collector output capacitance (Common base, input open circuited) voltage*1 V CE(sat) V BE(sat) fT Co b IE = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 10 V, IC = 500 mA VCE = 5 V, IC = 1 A IC = 500 mA, IB = 50 mA IC = 500 mA, IB = 50 mA VCB = 10 V, IE = -50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 85 50 0.2 0.85 200 11 20 0.4 1.20 V CEO IC = 2 mA, IB = 0 Symbol V CBO Conditions IC = 10 µA, IE = 0 Min 30 60 25 50 5 0.1 340 V µA V V MHz pF V Typ Max Unit V
Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio *1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1 : Pulse measurement *2 : Rank classification Rank hFE1 Q 85 to 170 R 120 to 240 S 170 to 340
2.3±0.2
(1.27)
(1.27)
Publication date: March 2003
SJC00150BED
1
2SC3940, 2SC3940A
PC Ta
1.2
1.5
IC VCE
Ta = 25°C IB = 10 mA 9 mA 8 mA 7 mA 6 mA 5 mA 4 mA 0.5 3 mA 2 mA 0.25 1 mA
IC I B
1.2 VCE = 10 V Ta = 25°C 1.0
Collector power dissipation PC (W)
1.0
1.25
Collector current IC (A)
0.8
1.0
Collector current IC (A)
0.8
0.6
0.75
0.6
0.4
0.4
0.2
0.2
0
0
0
40
80
120
160
0
2
4
6
8
10
0
0
2
4
6
8
10
12
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Base current IB (mA)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
10
VBE(sat) IC
100
hFE IC
600 VCE = 10 V
Base-emitter saturation voltage VBE(sat) (V)
IC / IB = 10
IC / IB = 10
1
10
Ta = 75°C 25°C
Forward current transfer ratio hFE
500
400
0.1
-25°C
25°C 1
Ta = -25°C 75°C
300 Ta = 75°C 200 25°C -25°C
0.01
0.1
100
0.001 0.01
0.1
1
10
0.01 0.01
0.1
1
10
0 0.01
0.1
1
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
fT I E
Collector output capacitance C (pF) (Common base, input open circuited) ob
200 V = 10 V CB Ta = 25°C
50
Cob VCB
Collector-emitter voltage (V) (Resistor between B and E) VCER
IE = 0 f = 1 MHz Ta = 25°C
VCER RBE
120 IC = 10 mA Ta = 25°C 100
Transition frequency fT (MHz)
160
40
80
120
30
60 2SC3940A 40 2SC3940 20
80
20
40
10
0 -1
-10
-100
0
1
10
100
0 0.1
1
10
100
Emitter current IE (mA)
Collector-base voltage VCB (V)
Base-emitter resistance RBE (k)
2
SJC00150BED
2SC3940, 2SC3940A
IC E O T a
104 VCE = 10 V
10
Safe operation area
Single pulse Ta = 25°C ICP
Collector current IC (A)
103
1
IC t=1s
ICEO (Ta) ICEO (Ta = 25°C)
t = 10 ms
102
0.1
1
0
40
80
120
160
0.001 0.1
1
10
2SC3940
10
0.01
2SC3940A
100
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
SJC00150BED
3
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