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Part: 2SC3943
Category:
Discrete
-> Transistors
-> Bipolar
-> Power
Description: V<SUB>CEO</SUB>(V) = 50 ;; I<SUB>C</SUB>(A) = 0.15 ;; HFE(min) = 20 ;; HFE(max) = ;; Package = TO-220F-A1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SC3943 datasheet File size : 172 kB
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Datasheet text preview:
Power Transistors
2SC3943
Silicon NPN epitaxial planar type
For video amplifier
0.7±0.1
Unit: mm
10.0±0.2 5.5±0.2
4.2±0.2
4.2±0.2 2.7±0.2
Features
· High transition frequency fT · Small collector output capacitance (Common base, input open circuited) C o b · Full-pack package which can be installed to the heat sink with one screw
16.7±0.3
7.5±0.2
3.1±0.1
Solder Dip (4.0)
1.4±0.1
1.3±0.2
02 0.5+0..1
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Resistor between B and E) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation * Junction temperature Storage temperature Note) *: Without heat sink Symbol V CBO V CER V CEO V EBO IC ICP PC Tj Tstg Rating 110 100 50 3.5 150 300 2.0 150 -55 to +150 Unit V V
14.0±0.5
0.8±0.1
2.54±0.3 5.08±0.5
123
V V mA mA W °C °C
1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Resistor between B and E) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-emitter cutoff current (Base open) Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Symbol V CBO V CER V CEO V EBO ICEO h FE V CE(sat) fT1 fT2 Co b Conditions IC = 100 µA, IE = 0 IC = 500 µA, RBE = 470 IC = 1 mA, IB = 0 IE = 100 µA, IC = 0 VCE = 35 V, IB = 0 VCE = 5 V, IC = 100 mA IC = 150 mA, IB = 15 mA VCB = 10 V, IC = 10 mA, f = 10 MHz VCB = 10 V, IC = 110 mA, f = 10 MHz VCB = 30 V, IE = 0, f = 1 MHz 300 350 3.5 pF 20 0.5 Min 110 100 50 3.5 10 Typ Max Unit V V V V µA V MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2003
SJD00116BED
1
2SC3943
PC Ta
3.0
TC=Ta
IC VCE
240
TC=25°C
IC VBE
120
VCE=5V TC=100°C 25°C
Collector power dissipation PC (W)
2.5
200
IB=5.0mA 4.5mA 4.0mA 3.5mA
100
Collector current IC (mA)
Collector current IC (mA)
2.0
160
80
25°C
1.5
120
3.0mA 2.5mA
60
1.0
80
2.0mA 1.5mA
40
0.5
40
1.0mA 0.5mA
20
0
0
40
80
120
160
200
0
0
0
2
4
6
8
10
12
0
0.2
0.4
0.6
0.8
1.0
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
10 000
IC/IB=10
hFE IC
VCE=5V
fT I E
600
VCB=10V f=10MHz TC=25°C
10
Forward current transfer ratio hFE
1 000
Transition frequency fT (MHz)
500
400
1
25°C
100
TC=100°C 25°C
300
25°C
0.1
TC=100°C 25°C
200
10
100
0.01
1
10
100
1 0.1
1
10
100
0 1
10
100
1000
Collector current IC (mA)
Collector current IC (mA)
Emitter current IE (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 IE=0 f=1MHz TC=25°C
Safe operation area
1 000
ICP Single pulse Ta=25°C t=10ms
5
Collector current IC (mA)
100 IC
t=100ms DC
4
3
10
2
1
1
0 1 10 100
0.1
1
10
100
1 000
Collector-base voltage VCB (V)
Collector-emitter voltage VCE (V)
2
SJD00116BED
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