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Part: 2SC4655
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> High-Frequency Amplifiers
Description: V<SUB>CEO</SUB>(V) = 20 ;; I<SUB>C</SUB>(A) = 0.03 ;; HFE(min) = 70 ;; HFE(max) = 250 ;; Package = SSMini3-G1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SC4655 datasheet File size : 191 kB
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Datasheet text preview:
Transistors
2SC4655
Silicon NPN epitaxial planar type
For high-frequency amplification
01 0.2+0..05
Unit: mm
01 0.15+0..05
1 (0.5) (0.5) 1.0±0.1 1.6±0.1 5°
2
(0.3)
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO IC PC Tj Tstg Rating 30 20 5 30 125 125 -55 to +125 Unit V V V mA mW °C °C
(0.4)
· Optimum for RF amplification, oscillation, mixing, and IF of FM/AM radios · SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing
0.8±0.1 1.6±0.15
1°
Features
3
0 to 0.1
0.45±0.1
Marking Symbol: K
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Forward current transfer ratio * Transition frequency Reverse transfer capacitance (Common emitter) Symbol V CBO V CEO V EBO h FE fT C re Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 IE = 10 µA, IC = 0 VCE = 10 V, IC = 1 mA VCB = 10 V, IE = -1 mA, f = 200 MHz VCB = 10 V, IE = -1 mA, f = 10.7 MHz Min 30 20 5 70 150 230 1.3 250 Typ Max Unit V V V MHz pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE B 70 to 160 C 110 to 250
0.75±0.15
1: Base 2: Emitter 3: Collector EIAJ: SC-75 SSMini3-G1 Package
0.2±0.1
Publication date: March 2003
SJC00164BED
1
2SC4655
PC Ta
150
12 IB = 100 µA
10
IC VCE
Ta = 25°C
12
IC I B
VCE = 10 V Ta = 25°C
Collector power dissipation PC (mW)
125
10
Collector current IC (mA)
100
8 60 µA 6 40 µA
Collector current IC (mA)
16
80 µA
8
75
6
50
4
4
25
2
20 µA
2
0
0
40
80
120
160
0
0
4
8
12
0
0
40
80
120
160
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Base current IB (µA)
I C VB E
Collector-emitter saturation voltage VCE(sat) (V)
60 VCE = 10 V
100
VCE(sat) IC
IC / IB = 10
hFE IC
300 VCE = 10 V
10
Forward current transfer ratio hFE
50
250 Ta = 75°C 200 25°C 150 -25°C 100
Collector current IC (mA)
40 25°C 30 Ta = 75°C -25°C
1 Ta = 75°C
20
25°C 0.1
10
-25°C
50
0
0
0.4
0.8
1.2
1.6
2.0
0.01 0.1
1
10
100
0 0.1
1
10
100
Base-emitter voltage VBE (V)
Collector current IC (mA)
Collector current IC (mA)
fT I E
600 Ta = 25°C
Zrb IE
80
Cre VCE
Reverse transfer capacitance Cre (pF) (Common emitter)
f = 2 MHz Ta = 25°C
2.4 IC = 1 mA f = 10.7 MHz Ta = 25°C
Reverse transfer impedance Zrb ()
Transition frequency fT (MHz)
500
2.0
60
400 VCB = 10 V 6V 200
1.6
300
40 VC B = 6 V 20 10 V
1.2
0.8
100
0.4
0 - 0.1
-1
-10
-100
0 - 0.1
-1
-10
0 0.1
1
10
100
Emitter current IE (mA)
Emitter current IE (mA)
Collector-emitter voltage VCE (V)
2
SJC00164BED
2SC4655
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 IE = 0 f = 1 MHz Ta = 25°C
bie gie
12 100
0
bre gre
Reverse transfer susceptance bre (mS)
yre = gre + jbre VCE = 10 V f = 0.45 MHz 10.7 25
yie = gie + jbie VCE = 10 V 10
- 0.5 58 - 0.4 mA -1.5 -1 mA -2 mA -4 mA -2.5 100 IE = -7 mA - 0.4 - 0.3 - 0.2 - 0.1
Input susceptance bie (mS)
8
58
-1.0
6
25 10.7 IE = - 0.1 mA -1 mA -2 mA -4 mA -7 mA f = 0.45 MHz
4
-2.0
2
1
10
100
0
0
4
8
12
16
20
-3.0 - 0.5
0
Collector-base voltage VCB (V)
Input conductance gie (mS)
Reverse transfer conductance gre (mS)
bfe gfe
0
boe goe
1.2 100 -7 mA -4 mA -2 mA -1 mA - 0.4 mA 25 0.4 10.7 0.2 IE = - 0.1 mA
Forward transfer susceptance bfe (mS)
-40
Output susceptance boe (mS)
-20
0.45 f = 0.45 MHz 10.7 10.7 25 -1 mA 58 100 100 -2 mA -4 mA 25 100 58 10.7 58 25 58
- 0.4 mA
- 0.1 mA
1.0
0.8 58 0.6
100 -60
IE = -7 mA
-80
-100
yfe = gfe + jbfe VCE = 10 V 0 20 40 60 80 100
-120
0
f = 0.45 MHz 0 0.2 0.4
yoe = goe + jboe VCE = 10 V 0.6 0.8 1.0
Forward transfer conductance gfe (mS)
Output conductance goe (mS)
SJC00164BED
3
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