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Part: 2SC4892
Category:
Discrete
-> Transistors
-> Bipolar
-> Power
-> Switching
Description: V<SUB>CEO</SUB>(V) = 800 ;; I<SUB>C</SUB>(A) = 1 ;; HFE(min) = 6 ;; HFE(max) = ;; Package = MT-4-A1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SC4892 datasheet File size : 165 kB
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Datasheet text preview:
Power Transistors
2SC4892
Silicon NPN triple diffusion planar type
For power switching
4.2±0.2
10.0±0.2
Unit: mm
1.0±0.2 5.0±0.1
Features
· High-speed switching · High collector-base voltage (Emitter open) VCBO · Satisfactory linearity of forward current transfer ratio hFE · Allowing supply with the radial taping
13.0±0.2
2.5±0.1
1.2±0.1 1.48±0.2
90°
C 1.0 2.25±0.2
18.0±0.5 Solder Dip
Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Base current Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol V CBO V CES V CEO V EBO IB IC ICP PC Rating 900 900 800 7 0.3 1 2 15 2 150 -55 to +150 °C °C Unit V V V V A A A W
0.65±0.1 0.65±0.1 0.35±0.1 1.05±0.1 0.55±0.1 2.5±0.2 2.5±0.2 123 0.55±0.1
1: Base 2: Collector 3: Emitter MT-4-A1 Package
Electrical Characteristics TC = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol V CEO ICBO IEBO h FE1 h FE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time V CE(sat) V BE(sat) fT to n tstg tf Conditions IC = 1 mA, IB = 0 VCB = 900 V, IE = 0 VEB = 7 V, IC = 0 VCE = 5 V, IC = 0.05 A VCE = 5 V, IC = 0.5 A IC = 0.2 A, IB = 0.04 A IC = 0.2 A, IB = 0.04 A VCE = 10 V, IC = 0.05 A, f = 1 MHz IC = 0.2 A IB1 = 0.04 A, IB2 = - 0.08 A VCC = 250 V 4 1.0 3.0 1.0 6 3 1.5 1.0 V V MHz µs µs µs Min 800 50 50 Typ Max Unit V µA µA
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2003
SJD00133BED
1
2SC4892
PC Ta
20
1.2
(1)TC=Ta (2)Without heat sink (PC=2.0W)
TC=25°C IB=200mA
IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
IC/IB=5
VCE(sat) IC
TC=100°C 25°C
Collector power dissipation PC (W)
1.0
Collector current IC (A)
15
(1)
1
0.8
10
0.6
100mA 90mA 80mA 70mA 60mA 50mA 40mA 30mA 20mA 10mA
25°C
0.1
0.4
5
0.2
(2)
0
0
40
80
120
160
0
0
2
4
6
8
10
12
0.01 0.01
0.1
1
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) IC
IC/IB=5
hFE IC
1 000
VCE=5V
fT I C
VCE=10V f=1MHz TC=25°C
Base-emitter saturation voltage VBE(sat) (V)
100
Forward current transfer ratio hFE
1
TC=25°C 100°C
25°C TC=100°C
Transition frequency fT (MHz)
1
25°C
100
10
25°C
10
0.1
1
1
0.01 0.01
0.1
1
0.1 0.01
0.1
0.1 0.001
0.01
0.1
1
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
ton , tstg , tf IC
Turn-on time ton , Storage time tstg , Fall time tf (µs)
100
Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=IB2) VCC=250V TC=25°C
Safe operation area
10
Non repetitive pulse TC=25°C ICP
1
tstg
Collector current IC (A)
10
1
IC
t=1ms
0.1
t=10ms DC
0.1
ton tf
0.01
0.01
0
0.2
0.4
0.6
0.8
1.0
0.001
1
10
100
1 000
Collector current IC (A)
Collector-emitter voltage VCE (V)
2
SJD00133BED
2SC4892
Rth t
104
Note: Rth was measured at Ta=25°C and under natural convection. (1)Without heat sink (2)With a 50×50×2mm Al heat sink
Thermal resistance Rth (°C/W)
103
102
(1) (2)
10
1
10-1 10-4
10-3
10-2
10-1
1
10
102
103
104
Time t (s)
SJD00133BED
3
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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