Digchip : Database on electronics components
 
Member, Distributor  
Log In
Email:
Password:


Part: 2SC5472

Category:
 Discrete

Description: Silicon NPN Epitaxial Planer Type ( For Low-voltage Low-noise High-frequency Oscillation )

Company: Panasonic Industrial Company/Electronic Components

Datasheet: Download 2SC5472 datasheet     File size : 90 kB

Request For quote: Find where to buy 2SC5472



Datasheet text preview:
Transistors

2SC5472
Silicon NPN epitaxial planer type
Unit: mm
(0.425)

For low-voltage low-noise high-frequency oscillation I Features
· High transition frequency fT · High gain of 8.2 dB and low noise of 1.8 dB at 3 V · Optimum for RF amplification of a portable telephone and pager · S-mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

01 0.3+0..0 ­

0 10 0.15+0..05 ­

3
1.25±0.10 2.1±0.1 5°

1

2
0.2±0.1 0 to 0.1 0.9±0.1
02 0.9+0..1 ­

(0.65) (0.65) 1.3±0.1 2.0±0.2 10°

I Absolute Maximum Ratings Ta = 25°C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 9 6 1 30 150 150 -55 to +150 Unit V V V mA mW °C °C
1: Base 2: Emitter 3: Collector

EIAJ: SC-70 S-Mini Type Package

Marking Symbol: 3A

I Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Transition frequency Collector output capacitance Forward transfer gain Noise figure Symbol ICBO IEBO h FE fT Co b | S21e NF |2 Conditions VCB = 9 V, IE = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 10 mA VCE = 3 V, IC = 10 mA, f = 2 GHz VCB = 3 V, IE = 0, f = 1 MHz VCE = 3 V, IC = 10 mA, f = 2 GHz VCE = 3 V, IC = 3 mA, f = 1.5 GHz 6.0 80 12.0 0.6 8.0 1.8 3.0 0.9 Min Typ Max 1 1 200 GHz pF dB dB Unit µA µA

1

2SC5472
hFE IC
240

Transistors
f T IC
14 12 VCE = 3 V
10

| S 2 1 e | 2 IC
VCE = 3 V f = 2 GHz

Transition frequency fT (GHz)

200

Forward transfer gain | S21e | 2 (dB)

Forward current transfer ratio hFE

8

160

Ta = 75°C 25°C -25°C

10 8 6 4 2 0

6

120

4

80

40

2

0 0.1

0.3

1

3

10

30

100

0

1

3

10

30

100

1

3

10

30

100

Collector current IC (mA)

Collector current IC (mA)

Collector current IC (mA)

NF IC
5 VCE = 3 V f = 1.5 GHz

4

Noise figure NF (dB)

3

2

1

0 0.1

0.3

1

3

10

Collector current IC (mA)

2




Others parts begin by 2s
2S-1   2S-2   2S-3   2S-4   2S-5   2S-6   2S-7   2S-8   2S-9   2S-10   2S-11   2S-12   2S-13   2S-14   2S-15   2S-16   2S-17   2S-18   2S-19   2S-20   2S-21   2S-22   2S-23   2S-24   2S-25   2S-26   2S-27   2S-28   2S-29   2S-30   2S-31   2S-32   2S-33   2S-34   2S-35   2S-36   2S-37   2S-38   2S-39   2S-40   2S-41   2S-42   2S-43   2S-44   2S-45   2S-46   2S-47   2S-48   2S-49