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Details, datasheet, quote on part number: 2SC5516
 
 
Part number2SC5516
CategoryDiscrete => Transistors => Bipolar => Power => High Power => NPN
DescriptionSilicon NPN Triple Diffusion Mesa Type ( For Horizontal Deflection Output )
CompanyPanasonic Industrial Company/Electronic Components
DatasheetDownload 2SC5516 datasheet
Request For QuoteFind where to buy 2SC5516
 


 
Specifications, Features, Applications

High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25C)

Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP PC Tj Tstg

Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Storage time Fall time

Symbol ICBO IEBO hFE VCE(sat) VBE(sat) fT tstg tf Conditions VCB = 0 VCB = 0 VEB = 0 VCE = 2.5A VCE = 5.0A min typ max V MHz s Unit mA A

f=64kHz, TC<90C Area of safe operation with respect to the single pulse overload curve at the time of switching ON, shutting down by the high voltage spark, holding down and like that, during horizontal operation.

(1) TC=Ta (2) With 2mm Al heat sink (3) Without heat sink



Some Part number from the same manufacture Panasonic Industrial Company/Electronic Components
2SC5517 Silicon NPN Triple Diffusion Mesa Type ( For Horizontal Deflection Output )
2SC5518
2SC5519
2SC5546 VCBO(V) = 1700 ;; IC(A) = 18 ;; HFE(min) = 6 ;; HFE(max) = 12 ;; Package = TOP-3E-A1
2SC5552 VCBO(V) = 1700 ;; IC(A) = 16 ;; HFE(min) = 6 ;; HFE(max) = 12 ;; Package = TOP-3E-A1
2SC5553 VCBO(V) = 1700 ;; IC(A) = 22 ;; HFE(min) = 6 ;; HFE(max) = 12 ;; Package = TOP-3E-A1
2SC5556 VCEO(V) = 10 ;; IC(A) = 0.08 ;; HFE(min) = 110 ;; HFE(max) = 250 ;; Package = Mini3-G1
2SC5580 Silicon NPN Epitaxial Planer Type ( For High-frequency Oscillation / Switching )
2SC5583 Silicon NPN Triple Diffusion Mesa Type ( For Horizontal Deflection Output )
2SC5584 VCBO(V) = 1500 ;; IC(A) = 20 ;; HFE(min) = 7 ;; HFE(max) = 14 ;; Package = TOP-3L-A1
2SC5591 VCBO(V) = 1700 ;; IC(A) = 20 ;; HFE(min) = 6 ;; HFE(max) = 12 ;; Package = TOP-3E-A1
2SC5592 VCEO(V) = 15 ;; IC(A) = 2.5 ;; HFE(min) = 400 ;; HFE(max) = 1000 ;; Package = Mini3-G1
2SC5597 VCBO(V) = 1700 ;; IC(A) = 22 ;; HFE(min) = 6 ;; HFE(max) = 12 ;; Package = TOP-3L-A1
2SC5609 Silicon NPN Epitaxial Planer Type Small Signal Transistor
2SC5622 Silicon NPN Triple Diffusion Mesa Type ( For Horizontal Deflection Output )
2SC5632 VCEO(V) = 8 ;; IC(A) = 0.05 ;; HFE(min) = 100 ;; HFE(max) = 350 ;; Package = SMini3-G1
2SC5654 VCEO(V) = 20 ;; IC(A) = 1 ;; HFE(min) = 160 ;; HFE(max) = 560 ;; Package = SMini3-G1
2SC5686 Power Device - Power Transistors - Television/display
2SC5725 VCEO(V) = 15 ;; IC(A) = 2 ;; HFE(min) = 200 ;; HFE(max) = 800 ;; Package = Mini3-G1
2SC5739 VCBO(V) = 60 ;; IC(A) = 3 ;; HFE(min) = 120 ;; HFE(max) = 320 ;; Package = TO-220D-A1
2SC5779 VCBO(V) = 50 ;; IC(A) = 10 ;; HFE(min) = 200 ;; HFE(max) = ;; Package = TO-220D-A1