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Part: 2SC5725
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: V<SUB>CEO</SUB>(V) = 15 ;; I<SUB>C</SUB>(A) = 2 ;; HFE(min) = 200 ;; HFE(max) = 800 ;; Package = Mini3-G1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SC5725 datasheet File size : 129 kB
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Datasheet text preview:
Transistors
2SC5725
Silicon NPN epitaxial planar type
For DC-DC converter Features
· Low collector-emitter saturation voltage VCE(sat) · Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing
1
0 10 0.40+0..05
Unit: mm
0 10 0.16+0..06
3
0 25 1.50+0..05 02 2.8+0..3
2
(0.65)
(0.95) (0.95) 1.9±0.1
0 20 2.90+0..05
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation * Junction temperature Storage temperature Symbol V CBO V CEO V EBO IC ICP PC Tj Tstg Rating 20 15 5 2 6 600 150 -55 to +150 Unit V V V A A mW °C °C
10°
02 1.1+0..1
03 1.1+0..1
1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package
Marking Symbol: 3C
Note) *: Measure on the ceramic substrate at 15 mm × 15 mm × 0.6 mm
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio * Collector-emitter saturation voltage * Symbol V CBO V CEO V EBO ICBO h FE1 h FE2 V CE(sat) fT Co b Conditions IC = 10 µA, IE = 0 IC = 1 mA, IB = 0 IE = 10 µA, IC = 0 VCB = 10 V, IE = 0 VCE = 2 V, IC = 100 mA VCE = 2 V, IC = 1.5 A IC = 0.5 A, IB = 25 mA IC = 1.5 A, IB = 30 mA Transition frequency Collector output capacitance (Common base, input open circuited) VCB = 10 V, IE = -50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 200 120 40 130 280 15 25 100 280 MHz pF mV Min 20 15 5 0.1 800 Typ Max Unit V V V µA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Pulse measurement
0 to 0.1
0.4±0.2
5°
Publication date: January 2003
SJC00188CED
1
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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