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Part: 2SD1010
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: V<SUB>CEO</SUB>(V) = 40 ;; I<SUB>C</SUB>(A) = 0.05 ;; HFE(min) = 400 ;; HFE(max) = 2000 ;; Package = TO-92-A1TO-92-B1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SD1010 datasheet File size : 229 kB
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Datasheet text preview:
Transistors
2SD1010
Silicon NPN epitaxial planar type
For low-frequency amplification
5.0±0.2
5.1±0.2
Unit: mm
4.0±0.2
Features
· High forward current transfer ratio hFE · Low collector-emitter saturation voltage VCE(sat) · High emitter-base voltage (Collector open) VEBO · Low noise voltage NV
0.7±0.1
0.7±0.2 12.9±0.5
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO IC ICP PC Tj Tstg Rating 50 40 15 50 100 300 150 -55 to +150 Unit V V
2.3±0.2
01 0.45+0..15 06 2.5+0..2
01 0.45+0..15 06 2.5+0..2
V mA mA mW °C °C
1
23
1 : Emitter 2 : Collector 3 : Base TO-92-B1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio * Collector-emitter saturation voltage Transition frequency Noise voltage Symbol V CBO V CEO V EBO ICBO ICEO h FE V CE(sat) fT NV Conditions IC = 10 µA, IE = 0 IC = 1 mA, IB = 0 IE = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 20 V, IB = 0 VCE = 10 V, IC = 2 mA IC = 10 mA, IB = 1 mA VCB = 10 V, IE = -2 mA, f = 200 MHz VCE = 10 V, IC = 1 mA, GV = 80 dB Rg = 100 k, Function = FLAT 400 0.05 200 80 Min 50 40 15 0.1 1 2 000 0.2 Typ Max Unit V V V µA µA V MHz mV
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE R 400 to 800 S 600 to 1 200 T 1 000 to 2 000
Publication date: January 2003
SJC00204BED
1
2SD1010
PC Ta
500
160 Ta = 25°C 140 100
IC VCE
120
IC VBE
VCE = 10 V 25°C Ta = 75°C -25°C
Collector power dissipation PC (mW)
Collector current IC (mA)
120 100 80 60 40 20 0
IB = 100 µA 90 µA 80 µA 70 µA 60 µA 50 µA 40 µA 30 µA 20 µA
Collector current IC (mA)
400
80
300
60
200
40
20
100
10 µA 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10 1 800
hFE IC
VCE = 10 V 250
fT I E
VCB = 10 V Ta = 25°C
Forward current transfer ratio hFE
Transition frequency fT (MHz)
1 500
200
10
1 200 Ta = 75°C 900 25°C -25°C 600
150
1
100
0.1
25°C
Ta = 75°C -25°C
50
300
0.01 0.1
1
10
100
0 0.1
1
10
100
0 - 0.1
-1
-10
-100
Collector current IC (mA)
Collector current IC (mA)
Emitter current IE (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
8 7 6 5 4 3 2 1 0 IE = 0 f = 1 MHz Ta = 25°C
NV IC
100 V = 10 V CE GV = 80 dB Function = FLAT T = 25°C 80 a
100
NV VCE
Rg = 100 k 80
Noise voltage NV (mV)
60 22 k 40 5 k 20
Noise voltage NV (mV)
Rg = 100 k
60 22 k 40 5 k
20
1
10
100
0 0.01
0.1
1
0
IC = 1 mA GV = 80 dB Function = FLAT Ta = 25°C 1 10 100
Collector-base voltage VCB (V)
Collector current IC (mA)
Collector-emitter voltage VCE (V)
2
SJC00204BED
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