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Part: 2SD1030
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: V<SUB>CEO</SUB>(V) = 40 ;; I<SUB>C</SUB>(A) = 0.05 ;; HFE(min) = 400 ;; HFE(max) = 2000 ;; Package = Mini3-G1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SD1030 datasheet File size : 229 kB
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Datasheet text preview:
Transistors
2SD1030
Silicon NPN epitaxial planar type
For low-frequency amplification
0 10 0.40+0..05
Unit: mm
0 10 0.16+0..06
Features
· High forward current transfer ratio hFE · Low collector-emitter saturation voltage VCE(sat) · High emitter-base voltage (Collector open) VEBO · Low noise voltage NV · Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing
10°
3
0 25 1.50+0..05 02 2.8+0..3
1
2
(0.65)
(0.95) (0.95) 1.9±0.1
0 20 2.90+0..05
02 1.1+0..1
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
Symbol V CBO V CEO V EBO IC ICP PC Tj Tstg
Rating 50 40 15 50 100 200 150 -55 to +150
Unit V V V mA mA mW °C °C
03 1.1+0..1
Absolute Maximum Ratings Ta = 25°C
1 : Base 2 : Emitter 3 : Collector EIAJ : SC-59 Mini3-G1 Package
Marking symbol 1Z ·
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio
*
Symbol V CBO V CEO V EBO ICBO ICEO h FE V CE(sat) fT
Conditions IC = 10 µA, IE = 0 IC = 1 mA, IB = 0 IE = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 20 V, IB = 0 VCE = 10 V, IC = 2 mA IC = 10 mA, IB = 1 mA VCB = 10 V, IE = -2 mA, f = 200 MHz
Min 50 40 15
Typ
0 to 0.1
Max
Unit V V V µA µA V MHz
0.1 1 400 0.05 200 2 000 0.2
Collector-emitter saturation voltage Transition frequency
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE R 400 to 800 S 600 to 1 200 T 1 000 to 2 000
0.4±0.2
5°
Publication date: January 2003
SJC00205BED
1
2SD1030
PC Ta
240
160 Ta = 25°C 140 100
IC VCE
120
IC VBE
VCE = 10 V 25°C Ta = 75°C -25°C
Collector power dissipation PC (mW)
200
Collector current IC (mA)
120 100 80 60 40 20
IB = 100 µA 90 µA 80 µA 70 µA 60 µA 50 µA 40 µA 30 µA 20 µA 10 µA 0 2 4 6 8 10 12
160
Collector current IC (mA)
80
120
60
80
40
40
20
0
0
40
80
120
160
0
0
0
0.4
0.8
1.2
1.6
2.0
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10 1 800
hFE IC
VCE = 10 V 250
fT I E
VCB = 10 V Ta = 25°C
Forward current transfer ratio hFE
Transition frequency fT (MHz)
1 500
200
10
1 200 Ta = 75°C 900 25°C -25°C 600
150
1
100
0.1
25°C
Ta = 75°C -25°C
50
300
0.01 0.1
1
10
100
0 0.1
1
10
100
0 - 0.1
-1
-10
-100
Collector current IC (mA)
Collector current IC (mA)
Emitter current IE (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
8 IE = 0 f = 1 MHz Ta = 25°C 6
4
2
0
1
10
100
Collector-base voltage VCB (V)
2
SJC00205BED
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