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Part: 2SD1266A
Category:
Discrete
-> Transistors
-> Bipolar
-> Power
-> General Purpose
Description: V<SUB>CEO</SUB>(V) = 80 ;; I<SUB>C</SUB>(A) = 3 ;; HFE(min) = 70 ;; HFE(max) = 250 ;; Package = TO-220F-A1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SD1266A datasheet File size : 213 kB
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Datasheet text preview:
Power Transistors
2SD1266, 2SD1266A
Silicon NPN triple diffusion planar type
For power amplification
Unit: mm
0.7±0.1
Features
· High forward current transfer ratio hFE which has satisfactory linearity · Low collector-emitter saturation voltage VCE(sat) · Full-pack package which can be installed to the heat sink with one screw
10.0±0.2 5.5±0.2
4.2±0.2
4.2±0.2 2.7±0.2
7.5±0.2
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SD1266 2SD1266A V CEO V EBO IC ICP TC = 25°C PC Tj Tstg Symbol V CBO Rating 60 80 60 80 6 3 5 35 2.0 150 -55 to +150 °C °C V A A W V Unit V
16.7±0.3
3.1±0.1
Solder Dip (4.0)
1.4±0.1
1.3±0.2
02 0.5+0..1
14.0±0.5
0.8±0.1
Collector-emitter voltage 2SD1266 (Base open) 2SD1266A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
2.54±0.3 5.08±0.5
123
1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-emitter cutoff current (E-B short) Collector-emitter cutoff current (Base open) 2SD1266 2SD1266A 2SD1266 2SD1266A IEBO hF E 1 * h FE2 Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time V CE(sat) fT to n tstg tf ICEO 2SD1266 2SD1266A VBE ICES VCE = 4 V, IC = 3 A VCE = 60 V, VBE = 0 VCE = 80 V, VBE = 0 VCE = 30 V, IB = 0 VCE = 60 V, IB = 0 VEB = 6 V, IC = 0 VCE = 4 V, IC = 1 A VCE = 4 V, IC = 3 A IC = 3 A, IB = 0.375 A VCE = 10 V, IC = 0.5 A, f = 10 MHz IC = 1 A, IB1 = 0.1 A, IB2 = - 0.1 mA VCC = 50 V 30 0.5 2.5 0.4 70 10 1.2 V MHz µs µs µs Symbol V CEO Conditions IC = 30 mA, IB = 0 Min 60 80 1.8 200 200 300 300 1 320 mA µA V µA Typ Max Unit V
Emitter-base cutoff current (Collector open) Forward current transfer ratio
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 Q 70 to 150 P 120 to 250 O 160 to 320
Publication date: April 2003
SJD00283BED
1
2SD1266, 2SD1266A
PC Ta
50 (1) TC = Ta (2) With a 100 × 100 × 2 mm Al heat sink (3) With a 50 × 50 × 2 mm Al heat sink (4) Without heat sink (PC = 2 W) 5 TC = 25°C 25°C TC = 100°C -25°C
IC VCE
8
IC VBE
VC E = 4 V
Collector power dissipation PC (W)
40 (1) 30
4
Collector current IC (A)
3
90 mA 80mA 70 mA 60 mA 50 mA 40 mA 30 mA 20 mA
Collector current IC (A)
IB = 100 mA
6
4
20
2
10
(2) (3) (4)
2
1
10 mA
0 0 40 80 120 160
0 0 2 4 6 8 10 12
0 0 0.4 0.8 1.2 1.6 2.0 2.4
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC/IB = 8
hFE IC
104
VCE = 4 V
fT I C
104
VCE = 5 V f = 10 MHz TC = 25°C
Forward current transfer ratio hFE
10 TC = 100°C 25°C 1 25°C 0.1
103
TC = 100°C 25°C
Transition frequency fT (MHz)
1 10
103
102
-25°C
102
10
10
0.01 0.01
0.1
1
10
1 0.01
0.1
1 0.01
0.1
1
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Safe operation area
100 Non repetitive pulse TC = 25°C
103
Rth t
(1) Without heat sink (2) With a 100 × 100 × 2 mm Al heat sink (1)
Thermal resistance Rth (°C/W)
102
Collector current IC (A)
10
ICP IC t = 1ms 10 ms DC
10
(2)
1
1
0.1 2SD1266A 2SD1266
101
0.01 1 10
100
1000
102 104
103
102
101
1
10
102
103
104
Collector-emitter voltage VCE (V)
Time t (s)
2
SJD00283BED
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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