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Part: 2SD1269
Category:
Discrete
-> Transistors
-> Bipolar
-> Power
-> General Purpose
Description: V<SUB>CEO</SUB>(V) = 80 ;; I<SUB>C</SUB>(A) = 4 ;; HFE(min) = 45 ;; HFE(max) = ;; Package = TO-220F-A1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SD1269 datasheet File size : 213 kB
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Datasheet text preview:
Power Transistors
2SD1269
Silicon NPN epitaxial planar type
For power switching Complementary to 2SB0944 Features
· Low collector-emitter saturation voltage VCE(sat) · Satisfactory linearity of forward current transfer ratio hFE · Large collector current IC · Full-pack package which can be installed to the heat sink with one screw.
16.7±0.3
Unit: mm
0.7±0.1
10.0±0.2 5.5±0.2
4.2±0.2
4.2±0.2 2.7±0.2
7.5±0.2
3.1±0.1
Solder Dip (4.0)
1.4±0.1
1.3±0.2
02 0.5+0..1
Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Ta = 25°C Tj Tstg Symbol V CBO V CEO V EBO IC ICP PC Rating 130 80 7 4 8 35 2.0 150 -55 to +150 °C °C Unit V V V A A W
14.0±0.5
0.8±0.1
2.54±0.3 5.08±0.5
123
1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package
Electrical Characteristics TC = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Collector-base cut-off current (Emitter open) Emitter-base cut-off current (Collector open) Forward current transfer ratio Symbol V CEO ICBO IEBO h FE1 hF E 2 * Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time V CE(sat) V BE(sat) fT to n tstg tf Conditions IC = 10 mA, IB = 0 VCB = 100 V, IE = 0 VEB = 5 V, IC = 0 VCE = 2 V, IC = 0.1 A VCE = 2 V, IC = 1 A IC = 3 A, IB = 0.15 A IC = 3 A, IB = 0.15 A VCE = 10 V, IC = 0.5 A, f = 10 MHz IC = 1 A, IB1 = 0.1 A, IB2 = - 0.1 A VCC = 50 V 30 0.5 2.5 0.15 45 60 260 0.5 1.5 V V MHz µs µs µs Min 80 10 50 Typ Max Unit V µA µA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE2 R 60 to 120 Q 90 to 180 P 130 to 260
Publication date: January 2003
SJD00183BED
1
2SD1269
PC Ta
50
8
(1)TC=Ta (2)With a 100×100×2mm Al heat sink (3)With a 50×50×2mm Al heat sink (4)Without heat sink (PC=2W)
TC=25°C IB=300mA
IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
10
VCE(sat) IC
IC/IB=20
Collector power dissipation PC (W)
40
(1)
Collector current IC (A)
6
30
140mA 120mA 100mA 60mA 40mA
1
25°C
TC=100°C
4
0.1
25°C
20
10
(2) (3) (4)
2
20mA 10mA
0.01
0
0
40
80
120
160
0
0
2
4
6
8
10
12
0.001 0.01
0.1
1
10
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) IC
100
IC/IB=20
hFE IC
10 000
VCE=2V
fT I C
10 000
VCE=10V f=10MHz TC=25°C
Base-emitter saturation voltage VBE(sat) (V)
Forward current transfer ratio hFE
10
1 000
1
TC=100°C 25°C 25°C
TC=100°C 25°C
Transition frequency fT (MHz)
1 000
100
25°C
100
0.1
10
10
0.01 0.01
0.1
1
10
1 0.01
0.1
1
10
1 0.01
0.1
1
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Cob VCB
Turn-on time ton , Storage time tstg , Fall time tf (µs) Collector output capacitance C (pF) (Common base, input open circuited) ob
10 000
IE=0 f=1MHz TC=25°C
ton, tstg, tf IC
100
Pulsed tw=1ms Duty cycle=1% IC/IB=10(IB1=IB2) VCC=50V TC=25°C
Safe operation area
100
Non repetitive pulse TC=25°C
Collector current IC (A)
1 000
10
10 ICP
IC t=10ms t=0.5ms
tstg
100
1
tf
1
t=1ms DC
ton
10
0.1
0.1
1 0.1
0.01
1
10
100
0
1
2
3
4
5
0.01
1
10
100
1 000
Collector-base voltage VCB (V)
Collector current IC (A)
Collector-emitter voltage VCE (V)
2
SJD00183BED
2SD1269
Rth t
103
(1)Without heat sink (2)With a 100×100×2mm Al heat sink
Thermal resistance Rth (°C/W)
102
(1)
10
(2)
1
10-1
10-2 10-4
10-3
10-2
10-1
1
10
102
103
104
Time t (s)
SJD00183BED
3
Others parts begin by 2s
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