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Part: 2SD1272
Category:
Discrete
-> Transistors
-> Bipolar
-> Power
-> General Purpose
Description: V<SUB>CEO</SUB>(V) = 150 ;; I<SUB>C</SUB>(A) = 2.5 ;; HFE(min) = 500 ;; HFE(max) = 2000 ;; Package = TO-220F-A1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SD1272 datasheet File size : 213 kB
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Datasheet text preview:
Power Transistors
2SD1272
Silicon NPN epitaxial planar type
For high-speed switching and high current amplification ratio
0.7±0.1
Unit: mm
10.0±0.2 5.5±0.2
4.2±0.2
4.2±0.2 2.7±0.2
Features
· High forward current transfer ratio hFE · Satisfactory linearity of forward current transfer ratio hFE · Full-pack package which can be installed to the heat sink with one screw
16.7±0.3
7.5±0.2
3.1±0.1
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature TC = 25°C Symbol V CBO V CEO V EBO IC ICP PC Tj Tstg Rating 200 150 6 2.5 1 40 2.0 150 -55 to +150 °C °C Unit V V V A A W
123
Solder Dip (4.0) 14.0±0.5
1.4±0.1
1.3±0.2
02 0.5+0..1
0.8±0.1
2.54±0.3 5.08±0.5
1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio * Collector-emitter saturation voltage Transition frequency Symbol V CEO ICBO IEBO h FE V CE(sat) fT Conditions IC = 25 mA, IB = 0 VCB = 200 V, IE = 0 VEB = 6 V, IC = 0 VCE = 4 V, IC = 0.2 A IC = 0.5 A, IB = 0.02 A VCE = 4 V, IC = 0.1 A, f = 10 MHz 25 500 Min 150 100 100 2 000 1 Typ Max Unit V µA µA V MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE Q 500 to 1 200 P 800 to 2 000
Publication date: February 2003
SJD00186BED
1
2SD1272
PC Ta
50
0.5
IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
TC=25°C IB=400µA 350µA 300µA 0.3 250µA 200µA 0.2 150µA 100µA 0.1
VCE(sat) IC
IC/IB=25
Collector power dissipation PC (W)
40
(1)
Collector current IC (A)
(1)TC=Ta (2)With a 100×100×2mm Al heat sink (3)With a 50×50×2mm Al heat sink (4)Without heat sink (PC=2W)
10
TC=100°C
0.4
30
1
25°C
20
25°C
0.1
10
(2) (3) (4)
50µA 0 0 2 4 6 8 10 12
0
0
40
80
120
160
0.01 0.01
0.1
1
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) IC
Base-emitter saturation voltage VBE(sat) (V)
IC/IB=25
hFE IC
104
VCE=4V TC=100°C 25°C 25°C
fT I C
104
VCE=4V f=10MHz TC=25°C
10
Forward current transfer ratio hFE
Transition frequency fT (MHz)
TC=100°C 25°C
103
103
1
25°C
102
102
0.1
10
10
0.01 0.01
0.1
1
1 0.01
0.1
1
10
1 0.01
0.1
1
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Safe operation area
100
Non repetitive pulse TC=25°C
Rth t
103 (1)Without heat sink
(2)With a 100×100×2mm Al heat sink (1)
Thermal resistance Rth (°C/W)
1 02
Collector current IC (A)
10
ICP
(2)
10
1
IC
t=10ms
t=1ms
DC
1
0.1
10-1
0.01
1
10
100
1000
10-2 10-4
10-3
10-2
10-1
1
10
1 02
1 03
1 04
Collector-emitter voltage VCE (V)
Time t (s)
2
SJD00186BED
Others parts begin by 2s
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