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Part: 2SD1277A
Category:
Discrete
-> Transistors
-> Bipolar
-> Power
-> General Purpose
Description: V<SUB>CEO</SUB>(V) = 80 ;; I<SUB>C</SUB>(A) = 8 ;; HFE(min) = 1000 ;; HFE(max) = 10000 ;; Package = TO-220F-A1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SD1277A datasheet File size : 213 kB
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Datasheet text preview:
Power Transistors
2SD1277, 2SD1277A
Silicon NPN triple diffusion planar type darlington
Unit: mm
0.7±0.1
For midium speed power switching Complementary to 2SB0951, 2SB0951A
16.7±0.3
10.0±0.2 5.5±0.2
4.2±0.2
4.2±0.2 2.7±0.2
Features
· High forward current transfer ratio hFE · High-speed switching · Full-pack package which can be installed to the heat sink with one screw
7.5±0.2
3.1±0.1
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SD1277 2SD1277A V CEO V EBO IC ICP TC = 25°C PC Tj Tstg Symbol V CBO Rating 60 80 60 80 7 8 12 45 2.0 150 -55 to +150 °C °C V A A W V Unit V
Solder Dip (4.0)
1.4±0.1
1.3±0.2
02 0.5+0..1
14.0±0.5
0.8±0.1
2.54±0.3 5.08±0.5
Collector-emitter voltage 2SD1277 (Base open) 2SD1277A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
123
1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package
Internal Connection
C B
E
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) 2SD1277 2SD1277A 2SD1277 2SD1277A IEBO hF E 1
*
Symbol V CEO ICBO
Conditions IC = 30 mA, IB = 0 VCB = 60 V, IE = 0 VCB = 80 V, IE = 0 VEB = 7 V, IC = 0 VCE = 3 V, IC = 4 A VCE = 3 V, IC = 8 A IC = 4 A, IB = 8 mA IC = 4 A, IB = 8 mA VCE = 10 V, IC = 0.5 A, f = 1 MHz IC = 2 A, IB1 = 8 mA, IB2 = -8 mA, VCC = 50 V
Min 60 80
Typ
Max
Unit V µA mA V V MHz µs µs µs
100 100 2 1 000 500 1.5 2.0 20 0.5 4.0 1.0 10 000
Emitter-base cutoff current (Collector open) Forward current transfer ratio
h FE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time V CE(sat) V BE(sat) fT to n tstg tf
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 R 1 000 to 2 500 Q P
2 000 to 5 000 4 000 to 10 000
SJD00191BED
Publication date: February 2003
1
2SD1277, 2SD1277A
PC Ta
50
(1)
IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
12
TC=25°C
VCE(sat) IC
10
(1) IC/IB=250 (2) IC/IB=500 (3) IC/IB=1000 TC=25°C (3) (2) (1)
Collector power dissipation PC (W)
40
Collector current IC (A)
(1)TC=Ta (2)With a 100×100×2mm Al heat sink (3)With a 50×50×2mm Al heat sink (4)Without heat sink (PC=2W)
10
8
IB=4.0mA 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 1.0mA 0.5mA
30
1
6
20
4
0.1
10
(2) (3) (4)
2
0
0
40
80
120
160
0
0
1
2
3
4
5
0.01 0.1
1
10
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Collector current IC (A)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
10
TC=100°C 25°C 25°C
VBE(sat) IC
105
hFE IC
IC/IB=500
Base-emitter saturation voltage VBE(sat) (V)
IC/IB=500
VCE=3V TC=100°C
10
Forward current transfer ratio hFE
104
25°C 25°C
TC=25°C
25°C
1
1
100°C
103
0.1
0.1
102
0.01 0.1
1
10
0.01 0.1
1
10
10 0.1
1
10
100
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Safe operation area
100
Non repetitive pulse TC=25°C
Rth t
1 03
(1)Without heat sink (2)With a 100×100×2mm Al heat sink
Thermal resistance Rth (°C/W)
ICP
t=10ms
1 02
Collector current IC (A)
10
IC DC t=1ms
(1)
10
(2)
1
1
0.1
2SD1277A 2SD1277
10-1
0.01
1
10
100
1 000
10-2 10-4
10-3
10-2
10-1
1
10
1 02
1 03
1 04
Collector-emitter voltage VCE (V)
Time t (s)
2
SJD00191BED
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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