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Part: 2SD1280
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: V<SUB>CEO</SUB>(V) = 20 ;; I<SUB>C</SUB>(A) = 1 ;; HFE(min) = 90 ;; HFE(max) = 280 ;; Package = MiniP3-F1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SD1280 datasheet File size : 213 kB
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Datasheet text preview:
Transistors
2SD1280
Silicon NPN epitaxial planar type
For low-voltage type medium output power amplification
4.5±0.1
Unit: mm
1.6±0.2 1.5±0.1
Features
· Low collector-emitter saturation voltage VCE(sat) · Satisfactory operation performances at high efficiency with the lowvoltage power supply. · Mini power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
0 25 4.0+0..20
2.5±0.1 3°
01 1.0+0..2
1 0.4±0.08 1.5±0.1 3°
3 2 0.5±0.08
0.4±0.04
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation * Junction temperature Storage temperature Symbol V CBO V CEO V EBO IC ICP PC Tj Tstg Rating 20 20 5 1 2 1 150 -55 to +150 cm2 Unit V V V A A W °C °C
3.0±0.15
45°
1 : Base 2 : Collector 3 : Emitter MiniP3-F1 Package
Marking Symbol: R
Note) *: Printed circuit board: Copper foil area of 1 or more, and the board thickness of 1.7 mm for the collector portion
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio Symbol V CEO V EBO ICBO hF E 1 * h FE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) V CE(sat) V BE(sat) fT Co b Conditions IC = 1 mA, IB = 0 IE = 10 µA, IC = 0 VCB = 10 V, IE = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 1.5 A IC = 1 A, IB = 50 mA IC = 500 mA, IB = 50 mA VCB = 6 V, IE = -50 mA, f = 200 MHz VCB = 6 V, IE = 0, f = 1 MHz 150 18 90 50 0.5 1.2 V V MHz pF Min 20 5 1 280 Typ Max Unit V V µA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 Q 90 to 155 R 130 to 210 S 180 to 280
0.4 max.
2.6±0.1
Publication date: December 2002
SJC00214CED
1
2SD1280
PC Ta
1.2 Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness
1.2
IC VCE
Ta = 25°C 1.2
IC V C E ( s a t )
Ta = 25°C IC / IB = 10 20
Collector power dissipation PC (W)
1.0
1.0
1.0 IB = 5.0 mA 4.5 mA 4.0 mA 3.5 mA 3.0 mA 2.5 mA 2.0 mA 1.5 mA 1.0 mA 0.2 0.5 mA
Collector current IC (A)
0.8
0.8
Collector current IC (A)
0.8
0.6
0.6
0.6
0.4
0.4
0.4
0.2
0.2
0
0
0
20
40
60
80 100 120 140 160
0
0.4
0.8
1.2
1.6
2.0
0
0
0.1
0.2
0.3
0.4
0.5
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Collector-emitter saturation voltage VCE(sat) (V)
IC I B
VCE = 2 V Ta = 25°C 1.0
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100
VBE(sat) IC
100
1.2
Collector current IC (A)
10
Base-emitter saturation voltage VBE(sat) (V)
IC / IB = 20
IC / IB = 10
10
0.8
25°C 1 Ta = -25°C 75°C
0.6
1 Ta = 75°C 25°C 0.1 -25°C
0.4
0.1
0.2
0
0
2
4
6
8
10
12
0.01 0.01
0.1
1
10
0.01 0.01
0.1
1
10
Base current IB (mA)
Collector current IC (A)
Collector current IC (A)
hFE IC
600 VCE = 2 V 200 175
fT I E
VCB = 6 V Ta = 25°C
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
50 IE = 0 f = 1 MHz Ta = 25°C
Forward current transfer ratio hFE
Transition frequency fT (MHz)
500
40
150 125 100 75 50 25 0 -1
400 Ta = 75°C 25°C 200 -25°C
30
300
20
10
100
0 0.01
0
0.1
1
10
-10
-100
1
10
100
Collector current IC (A)
Emitter current IE (mA)
Collector-base voltage VCB (V)
2
SJC00214CED
2SD1280
IC B O T a
104 VCB = 10 V 105
IC E O T a
VCE = 18 V
Safe operation area
10 ICP Single pulse Ta = 25°C IC t=1s DC 0.1 t = 10 ms
104
103
102
102
10 10
Collector current IC (A)
0 20 40 60 80 100 120 140 160
103
1
ICBO (Ta) ICBO (Ta = 25°C)
ICEO (Ta) ICEO (Ta = 25°C)
0.01
1
0
20
40
60
80 100 120 140 160
1
0.001 0.1
1
10
100
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
SJC00214CED
3
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