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Part: 2SD1302
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: V<SUB>CEO</SUB>(V) = 20 ;; I<SUB>C</SUB>(A) = 0.5 ;; HFE(min) = 200 ;; HFE(max) = 800 ;; Package = TO-92-A1TO-92-B1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SD1302 datasheet File size : 155 kB
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Datasheet text preview:
Transistors
2SD1302
Silicon NPN epitaxial planar type
For low-voltage output amplification For muting For DC-DC converter Features
· Low collector-emitter saturation voltage VCE(sat) · Low ON resistance Ron · High forward current transfer ratio hFE
0.7±0.1
Unit: mm
5.0±0.2 4.0±0.2
0.7±0.2 12.9±0.5
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO IC ICP PC Tj Tstg Rating 25 20 12 0.5 1 600 150 -55 to +150 Unit V V V A A mW °C °C
01 0.45+0..15 06 2.5+0..2 06 2.5+0..2 01 0.45+0..15
1
23
5.1±0.2
1: Emitter 2: Collector 3: Base TO-92-B1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio *1 Symbol V CBO V CEO V EBO ICBO h FE1 * 2 h FE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) ON resistanse *3 V CE(sat) V BE(sat) fT Co b Ron Conditions IC = 10 µA, IE = 0 IC = 1 mA, IB = 0 IE = 10 µA, IC = 0 VCB = 25 V, IE = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 1 A IC = 0.5 A, IB = 20 mA IC = 0.5 A, IB = 50 mA VCB = 10 V, IE = -50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 200 10 1.0 200 60 0.13 0.40 1.2 V V MHz pF Min 25 20 12 100 800 Typ Max Unit V V V nA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification *3: Ron Measurement circuit
1 k
Rank hFE1
R 200 to 350
S 300 to 500
T 400 to 800
IB = 1 mA f = 1 kHz V = 0.3 V VB VV VA
Ron =
VB × 1 000 () VA - VB
2.3±0.2
Publication date: January 2003
SJC00215BED
1
2SD1302
PC Ta
800
IC VCE
IB = 4.0 mA 1.0 Ta = 25°C 3.5 mA 3.0 mA 0.8 2.5 mA 2.0 mA 0.6 1.5 mA 0.4 1.0 mA 0.5 mA 0.2
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 25
1.2
Collector power dissipation PC (mW)
700
500 400 300 200 100 0
Collector current IC (A)
600
10
1 Ta = 75°C 25°C 0.1 -25°C
0
20
40
60
80 100 120 140 160
0
0
1
2
3
4
5
6
0.01 0.01
0.1
1
10
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) IC
100
hFE IC
1 200 VCE = 2 V
fT I E
400 350 VCB = 10 V Ta = 25°C
Base-emitter saturation voltage VBE(sat) (V)
IC / IB = 10
Forward current transfer ratio hFE
Transition frequency fT (MHz)
1 000
10
300 250 200 150 100 50 0 -1
800 Ta = 75°C 600 25°C -25°C 400
25°C 1 Ta = -25°C 75°C
0.1
200
0.01 0.01
0.1
1
10
0 0.01
0.1
1
10
-10
-100
Collector current IC (A)
Collector current IC (A)
Emitter current IE (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
24 IE = 0 Ta = 25°C f = 1 MHz 1 000
Ron IB
Ron measurement circuit IB = 1 mA 100 VB V VA f = 1 kHz V = 0.3 V 10
20
16
12
8
ON resistance Ron ()
1 10 100
1
4
0
0.1 0.01
0.1
1
10
Collector-base voltage VCB (V)
Base current IB (mA)
2
SJC00215BED
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