|
|
Part: 2SD1640
Category:
Discrete
-> Transistors
-> Bipolar
-> Power
Description: V<SUB>CEO</SUB>(V) = 100 ;; I<SUB>C</SUB>(A) = 2 ;; HFE(min) = 4000 ;; HFE(max) = 40000 ;; Package = TO-126B-A1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SD1640 datasheet File size : 195 kB
Request For quote: Find where to buy 2SD1640
Datasheet text preview:
Power Transistors
2SD1640
Silicon NPN epitaxial planar type darlington
Unit: mm
For low-frequency output amplification
3.16±0.1
05 8.0+0..1
3.2±0.2
3.8±0.3
1.9±0.1
· High forward current transfer ratio hFE · Large peak collector current ICP · High collector-emitter voltage (Base open) VCEO
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO IC ICP PC Tj Tstg Rating 120 100 5 2 3 1.2 150 -55 to +150 Unit V V V A A W °C °C
B
1 2 0.75±0.1 4.6±0.2
0.5±0.1 0.5±0.1 2.3±0.2 3 1.76±0.1
16.0±1.0
1: Emitter 2: Collector 3: Base TO-126B-A1 Package
Internal Connection
C
E 200
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio
*1, 2
Symbol V CBO V CEO V EBO ICBO IEBO h FE V CE(sat) V BE(sat)
Conditions IC = 100 µA, IE = 0 IC = 1 mA, IB = 0 IE = 100 µA, IC = 0 VCB = 25 V, IE = 0 VEB = 4 V, IC = 0 VCE = 10 V, IC = 1 A IC = 1.0 A, IB = 1.0 mA IC = 1.0 A, IB = 1.0 mA
Min 120 100 5
Typ
Max
3.05±0.1
Features
11.0±0.5
Unit V V V µA µA V V
0.1 1 4 000 40 000 1.5 2.0
Collector-emitter saturation voltage *1 Base-emitter saturation voltage
*1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank hFE Q R S
4 000 to 10 000 8 000 to 20 000 16 000 to 40 000
Publication date: May 2003
SJD00209BED
1
2SD1640
PC Ta
1.6
Without heat sink
IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
3.0
TC=25°C IB=180µA
VCE(sat) IC
IC/IB=1000
10
Collector power dissipation PC (W)
2.5
Collector current IC (A)
1.2
150µA
2.0
120µA 90µA
25°C
1
TC=100°C 25°C
0.8
1.5
60µA
1.0
0.1
0.4
0.5
30µA
0
0
40
80
120
160
0
0
2
4
6
8
10
0.01 0.01
0.1
1
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) IC
105
hFE IC
VCE=10V
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
60
IE=0 f=1MHz TC=25°C
Base-emitter saturation voltage VBE(sat) (V)
IC/IB=1000
100
Forward current transfer ratio hFE
50
104
TC=100°C 25°C 25°C
40
10
103
30
TC=25°C
1
100°C 25°C
20
102
10
0.1 0.01
0.1
1
10 0.01
0
0.1
1
10
1
10
100
Collector current IC (A)
Collector current IC (A)
Collector-base voltage VCB (V)
Safe operation area
10
ICP IC Single pulse TC=25°C
Rth t
1 04
free air
Collector current IC (A)
1
t=100ms
t=10ms
Thermal resistance Rth (°C/W)
1 03
t=1s
1 02
10-1
10
10-2
1
10-3 0.1
1
10
100
10-1 10-4
10-3
10-2
10-1
1
10
1 02
1 03
1 04
Collector-emitter voltage VCE (V)
Time t (s)
2
SJD00209BED
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
|
|
|
