· High forward current transfer ratio hFE· Low collector-emitter saturation voltage VCE(sat)· S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape pacing and the magazine pacing.
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating to +150 Unit mW °C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio Symbol VCBO VCEO VEBO ICBO ICEO * hFE2 Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) fT Cob Conditions = 10 µA, = 2 mA, = 10 µA, = 0 VCB = 0 VCE = 0 VCE 2 mA VCE = 100 mA, 10 mA VCB = -2 mA, = 200 MHz VCB = 1 MHz V MHz pF Min Typ Max Unit V µA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. Rank classification Rank hFE1 Marking symbol ZS No rank 460 Z
Product of no-rank is not classified and have no marking symbol for rank.
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