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Part: 2SD1893
Category: Discrete -> Transistors -> Bipolar -> Darlington -> NPN
Description: Silicon NPN Triple Diffusion Planar Type Darlington ( For Power Amplification )
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SD1893 datasheet File size : 198 kB
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Datasheet text preview:
Power Transistors
2SD1893
Silicon NPN triple diffusion planar type Darlington
For power amplification Complementar y to 2SB1253
Unit: mm
15.0±0.3 11.0±0.2 5.0±0.2 3.2
s Features
q q q q
16.2±0.5 12.5 3.5 Solder Dip
Optimum for 40W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): <2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25°C)
Ratings 130 110 5 10 6 50 3 150 55 to +150 Unit V V V A A W
0.7
21.0±0.5 15.0±0.2
3.2±0.1
2.0±0.2
2.0±0.1 0.6±0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC Tj T stg
1.1±0.1 5.45±0.3 10.9±0.5 1 2 3
1:Base 2:Collector 3:Emitter TOP3 Full Pack Package(a)
Internal Connection
C B
°C °C
E
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h FE2
(TC=25°C)
Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 130V, IE = 0 VCE = 110V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 5A IC = 5A, IB = 5mA IC = 5A, IB = 5mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 5A, IB1 = 5mA, IB2 = 5mA, VCC = 50V 20 1.4 4.5 0.8 110 2000 5000 30000 2.5 3.0 V V MHz µs µs µs min typ max 100 100 100 Unit µA µA µA V
Rank classification
Q P
Rank h FE2
5000 to 15000 8000 to 30000
1
Power Transistors
PC -- Ta
80 12 TC=25°C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3W) (1) IB=5mA
2SD1893
IC -- VCE
100
VBE(sat) -- IC
Base to emitter saturation voltage VBE(sat) (V)
IC/IB=1000
Collector power dissipation PC (W)
70 60 50 40 30 20 10 (3) 0 0 20 40
10
30
Collector current IC (A)
8
6
1mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA
10
3 TC=25°C 1 25°C 0.3 100°C
4
0.4mA 0.3mA
(2)
2
0.2mA 0.1mA
0 60 80 100 120 140 160 0 2 4 6 8 10 12
0.1 0.1
0.3
1
3
10
30
100
Ambient temperature Ta (°C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=1000 105
hFE -- IC
1000
Cob -- VCB
Collector output capacitance Cob (pF)
VCE=5V IE=0 f=1MHz TC=25°C
30
Forward current transfer ratio hFE
300
104 TC=100°C 103 25°C 25°C 102
10
100
3
30
1 25°C TC=100°C 0.3 25°C
10
3
0.1 0.1
0.3
1
3
10
30
100
10 0.01 0.03
1 0.1 0.3 1 3 10 1 3 10 30 100
Collector current IC (A)
Collector current IC (A)
Collector to base voltage VCB (V)
ton, tstg, tf -- IC
100 30 Pulsed tw=1ms Duty cycle=1% IC/IB=1000 (IB1=IB2) VCC=50V TC=25°C tstg 3 ton 1 0.3 0.1 0.03 0.01 0 4 8 12 16 tf
Area of safe operation (ASO)
100 30 Non repetitive pulse TC=25°C ICP IC 10ms 1 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 DC t=1ms
Switching time ton,tstg,tf (µs)
Collector current IC (A)
10
10 3
Collector current IC (A)
Collector to emitter voltage VCE (V)
2
Power Transistors
Rth(t) -- t
10000 Note: Rth was measured at Ta=25°C and under natural convection. (1) PT=10V × 0.3A (3W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
2SD1893
Thermal resistance Rth(t) (°C/W)
1000
100 (1) 10 (2)
1
0.1 104
103
102
101
1
10
102
103
104
Time t (s)
3
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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