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Part: 2SD2137A
Category:
Discrete
-> Transistors
-> Bipolar
-> Power
Description: V<SUB>CEO</SUB>(V) = 80 ;; I<SUB>C</SUB>(A) = 3 ;; HFE(min) = 70 ;; HFE(max) = 320 ;; Package = MT-4-A1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SD2137A datasheet File size : 234 kB
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Datasheet text preview:
Power Transistors
2SD2137A
Silicon NPN triple diffusion planar type
4.2±0.2
For power amplification Complementary to 2SB1417A
· High forward current transfer ratio hFE which has satisfactory linearity. · Low collector-emitter saturation voltage VCE(sat) · Allowing supply with the radial taping
13.0±0.2
Unit: mm
10.0±0.2 5.0±0.1
1.0±0.2
2.5±0.1
1.2±0.1 1.48±0.2
90°
Features
C 1.0 2.25±0.2
18.0±0.5 Solder Dip
Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Ta = 25°C Tj Tstg Symbol V CBO V CEO V EBO IC ICP PC Rating 80 80 6 3 5 15 2.0 150 -55 to +150 °C °C Unit V V V A A W
0.65±0.1 0.65±0.1 0.35±0.1 1.05±0.1 0.55±0.1 2.5±0.2 2.5±0.2 123 0.55±0.1
1: Base 2: Collector 3: Emitter MT-4-A1 Package
Electrical Characteristics TC = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-emitter cutoff current (E-B short) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol V CEO VBE ICES ICEO IEBO hF E 1 * h FE2 Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time V CE(sat) fT to n tstg tf Conditions IC = 30 mA, IB = 0 VCE = 4 V, IC = 3 A VCB = 80 V, VBE = 0 VCE = 60 V, IB = 0 VEB = 6 V, IC = 0 VCE = 4 V, IC = 1 A VCE = 4 V, IC = 3 A IC = 3 A, IB = 0.375 A VCE = 5 V, IC = 0.2 A, f = 10 MHz IC = 1 A, IB1 = 0.1 A, IB2 = - 0.1 A VCC = 50 V 30 0.3 2.5 0.2 70 10 1.2 V MHz µs µs µs Min 80 1.8 100 100 100 320 Typ Max Unit V V µA µA µA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 Q 70 to 150 P 120 to 250 O 160 to 320
Publication date: September 2003
SJD00247BED
1
2SD2137A
PC Ta
20
IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
6
100
TC=25°C
VCE(sat) IC
IC/IB=8
Collector power dissipation PC (W)
(1)TC=Ta (2)Without heat sink (PC=2.0W)
5
(1)
Collector current IC (A)
15
4
IB=100mA 90mA 80mA 70mA 60mA 50mA 40mA 30mA
10
10
3
1
TC=100°C 25°C
2
20mA
5
10mA
0.1
25°C
1
(2)
0
0
40
80
120
160
0
0
2
4
6
8
10
12
0.01 0.01
0.1
1
10
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Collector current IC (A)
I C VB E
6
VCE=4V
hFE IC
1 000
VCE=4V TC=100°C 25°C 25°C
fT I C
1 000
VCE=5V f=10MHz TC=25°C
Forward current transfer ratio hFE
Transition frequency fT (MHz)
5
Collector current IC (A)
4
100
100
3
TC=100°C
2
25°C
10
10
1
25°C
0
0
0.4
0.8
1.2
1.6
2.0
1 0.01
0.1
1
10
1 0.01
0.1
1
10
Base-emitter voltage VBE (V)
Collector current IC (A)
Collector current IC (A)
Cob VCB
Turn-on time ton , Storage time tstg , Fall time tf (µs) Collector output capacitance C (pF) (Common base, input open circuited) ob
1 000
100
IE=0 f=1MHz TC=25°C
ton, tstg, tf IC
Pulsed tw=1ms Duty cycle=1% IC/IB=10(IB1=IB2) VCC=50V TC=25°C
Safe operation area
100
Non repetitive pulse TC=25°C
Collector current IC (A)
10
tstg
10
ICP IC t=1ms t=10ms DC
100
1
ton tf
1
10
0.1
0.1
1
0.01
1
10
100
0
1
2
3
4
0.01
1
10
100
1 000
Collector-base voltage VCB (V)
Collector current IC (A)
Collector-emitter voltage VCE (V)
2
SJD00247BED
2SD2137A
Rth t
104
Note: Rth was measured at Ta=25°C and under natural convection. (1)Without heat sink (2)With a 50×50×2mm Al heat sink
Thermal resistance Rth (°C/W)
103
102
(1) (2)
10
1
10-1 10-4
10-3
10-2
10-1
1
10
102
103
104
Time t (s)
SJD00247BED
3
Others parts begin by 2s
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