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Part: 2SD2138
Category:
Discrete
-> Transistors
-> Bipolar
-> Power
Description: V<SUB>CEO</SUB>(V) = 60 ;; I<SUB>C</SUB>(A) = 2 ;; HFE(min) = 1000 ;; HFE(max) = ;; Package = MT-4-A1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SD2138 datasheet File size : 234 kB
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Datasheet text preview:
Power Transistors
2SD2138, 2SD2138A
Silicon NPN triple diffusion planar type darlington
4.2±0.2
For power amplification Complementary to 2SB1418 and 2SB1418A Features
· High forward current transfer ratio hFE which has satisfactory linearity. · Allowing supply with the radial taping
Unit: mm
10.0±0.2 5.0±0.1
1.0±0.2
90° 2.5±0.1
13.0±0.2
1.2±0.1 1.48±0.2
C 1.0 2.25±0.2
18.0±0.5 Solder Dip
Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) 2SD2138 2SD2138A V CEO V EBO IC ICP PC Ta = 25°C Tj Tstg Symbol V CBO Rating 60 80 60 80 5 2 4 15 2.0 150 -55 to +150 °C °C V A A W V Unit V
0.65±0.1 0.65±0.1 0.35±0.1 1.05±0.1 0.55±0.1 2.5±0.2 2.5±0.2 123 0.55±0.1
Collector-emitter voltage 2SD2138 (Base open) 2SD2138A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
1: Base 2: Collector 3: Emitter MT-4-A1 Package
Internal Connection
C B
Electrical Characteristics TC = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) 2SD2138 2SD2138A 2SD2138 2SD2138A IEBO h FE1 hF E 2 * Collector-emitter saturation voltage Transition frequency Turn-on time Turn-off time V CE(sat) fT to n to f f ICEO 2SD2138 2SD2138A VBE ICBO VCE = 4 V, IC = 2 A VCB = 60 V, IE = 0 VCB = 80 V, IE = 0 VCE = 30 V, IB = 0 VCE = 40 V, IB = 0 VEB = 5 V, IC = 0 VCE = 4 V, IC = 1 A VCE = 4 V, IC = 2 A IC = 2 A, IB = 8 mA VCE = 10 V, IC = 0.5 A, f = 1 MHz IC = 2 A, IB1 = 8 mA, IB2 = -8 mA, VCC = 50 V 20 0.4 4 1 000 2 000 Symbol V CEO Conditions IC = 30 mA, IB = 0 Min 60 80 Typ
E
Max
Unit V
2.8 100 100 100 100 100
V µA µA µA
Emitter-base cutoff current (Collector open) Forward current transfer ratio
10 000 2.5 V MHz µs µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE2 Q P
2 000 to 5 000 4 000 to 10 000
Publication date: September 2003
SJD00248BED
1
2SD2138, 2SD2138A
PC Ta
20
IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
6
100
TC=25°C
VCE(sat) IC
IC/IB=250
Collector power dissipation PC (W)
(1)TC=Ta (2)Without heat sink (PC=2.0W)
5
Collector current IC (A)
15
(1)
IB=2mA
4
10
3
1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA
10
1
25°C
TC=25°C 100°C
2
0.2mA
5
0.1
1
(2)
0
0
40
80
120
160
0
0
4
8
12
0.01 0.01
0.1
1
10
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Collector current IC (A)
I C VB E
6
VCE=4V 25°C
hFE IC
VCE=4V
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
1 000
IE=0 f=1MHz TC=25°C
105
Forward current transfer ratio hFE
5
TC=100°C 25°C
TC=100°C
Collector current IC (A)
4
104
25°C
100
3
25°C
2
103
10
1
0
0
1
2
3
4
102 0.01
0.1
1
10
1
1
10
100
Base-emitter voltage VBE (V)
Collector current IC (A)
Collector-base voltage VCB (V)
Safe operation area
100
Non repetitive pulse TC=25°C
Rth t
104
Note: Rth was measured at Ta=25°C and under natural convection. (1)Without heat sink (2)With a 50×50×2mm Al heat sink
Thermal resistance Rth (°C/W)
103
Collector current IC (A)
10
ICP t=1ms
102
(1) (2)
1
IC DC t=10ms
10
0.1
2SD2138A 2SD2138
1
0.01
1
10
100
1 000
10-1 10-4
10-3
10-2
10-1
1
10
102
103
104
Collector-emitter voltage VCE (V)
Time t (s)
2
SJD00248BED
Others parts begin by 2s
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