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Part: 2SD2457
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: V<SUB>CEO</SUB>(V) = 40 ;; I<SUB>C</SUB>(A) = 1.5 ;; HFE(min) = 80 ;; HFE(max) = 220 ;; Package = MiniP3-F1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SD2457 datasheet File size : 181 kB
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Datasheet text preview:
Transistors
2SD2457
Silicon NPN epitaxial planar type
For low-frequency output amplification
4.5±0.1 1.6±0.2 1.5±0.1
Unit: mm
Features
· High collector-emitter voltage (Base open) VCEO · Low collector power dissipation PC · Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
0 25 4.0+0..20
2.5±0.1 3°
0.4±0.04
0.4±0.08 1.5±0.1 3°
01 1.0+0..2
1
3 2 0.5±0.08
2.6±0.1
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation * Junction temperature Storage temperature Symbol V CBO V CEO V EBO IC ICP PC Tj Tstg Rating 50 40 5 1.5 3 1 150 -55 to +150 cm2 Unit V V V A A W °C °C
3.0±0.15
45°
1: Base 2: Collector 3: Emitter MiniP3-F1 Package
Marking Symbol: 1Y
Note) *: Printed circuit board: Copper foil area of 1 or more, and the board thickness of 1.7 mm for the collector portion
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio *1, 2 Collector-emitter saturation voltage Base-emitter saturation voltage *1 Transition frequency
*1 *1
Symbol V CBO V CEO ICBO ICEO IEBO h FE V CE(sat) V BE(sat) fT Co b
Conditions IC = 1 mA, IE = 0 IC = 2 mA, IB = 0 VCB = 20 V, IE = 0 VCE = 10 V, IB = 0 VEB = 5 V, IE = 0 VCE = 5 V, IC = 1 A IC = 1.5 A, IB = 0.15 A IC = 2 A, IB = 0.2 A VCB = 5 V, IE = - 0.5 A, f = 200 MHz VCB = 20 V, IE = 0, f = 1 MHz
Min 50 40
Typ
Max
Unit V V µA µA µA V V MHz pF
1 100 10 80 120 220 1.0 1.5 150 45
Collector output capacitance (Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank hFE Q 80 to 160 R 120 to 220
0.4 max.
Publication date: May 2003
SJC00263CED
1
2SD2457
PC Ta
1.2 Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness
4.0 3.5 IB = 40 mA
IC VCE
Ta = 25°C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
10 IC / IB = 10
Collector power dissipation PC (W)
1.0
0.8
Collector current IC (A)
3.0 2.5 2.0 1.5 1.0
35 mA 30 mA 25 mA 20 mA 15 mA 10 mA
1 Ta = 75°C 25°C 0.1 -25°C
0.6
0.4
0.01
0.2
0.5
5 mA
0
0
20
40
60
80 100 120 140 160
0
0
2
4
6
8
10
0.001 0.01
0.1
1
10
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) IC
100
hFE IC
300 VCE = 5 V
240 VCB = 5 V Ta = 25°C
fT I E
Base-emitter saturation voltage VBE(sat) (V)
IC / IB = 10
Forward current transfer ratio hFE
10
200 Ta = 75°C 150 25°C -25°C 100
Transition frequency fT (MHz)
250
200
160
25°C 1 Ta = -25°C 75°C
120
80
0.1
50
40
0.01 0.01
0.1
1
10
0 0.01
0.1
1
10
0 - 0.01
- 0.1
-1
-10
Collector current IC (A)
Collector current IC (A)
Emitter current IE (A)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
120 IE = 0 f = 1 MHz Ta = 25°C
100
80
60
40
20
0
1
10
100
Collector-base voltage VCB (V)
2
SJC00263CED
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