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Part: 2SD2459
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: V<SUB>CEO</SUB>(V) = 150 ;; I<SUB>C</SUB>(A) = 1 ;; HFE(min) = 120 ;; HFE(max) = 340 ;; Package = MiniP3-F1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SD2459 datasheet File size : 181 kB
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Datasheet text preview:
Transistors
2SD2459
Silicon NPN epitaxial planar type
For low-frequency output amplification
4.5±0.1 1.6±0.2 1.5±0.1
Unit: mm
Features
· High collector-emitter voltage (Base open) VCEO · Low collector-emitter saturation voltage VCE(sat) · Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
0 25 4.0+0..20
2.5±0.1 3°
0.4±0.04
0.4±0.08 1.5±0.1 3°
01 1.0+0..2
1
3 2 0.5±0.08
2.6±0.1
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation * Junction temperature Storage temperature Symbol V CBO V CEO V EBO IC ICP PC Tj Tstg Rating 150 150 5 1 1.5 1 150 -55 to +150 cm2 Unit V V V A A W °C °C
3.0±0.15
45°
1: Base 2: Collector 3: Emitter MiniP3-F1 Package
Marking Symbol: 2E
Note) *: Printed circuit board: Copper foil area of 1 or more, and the board thickness of 1.7 mm for the collector portion
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio Collector-emitter saturation voltage *1 Base-emitter saturation voltage *1 Transition frequency Collector output capacitance (Common base, input open circuited) Symbol V CBO V CEO V EBO ICBO h FE1 * 2 h FE2 * 1 V CE(sat) V BE(sat) fT Co b Conditions IC = 10 µA, IE = 0 IC = 1 mA, IB = 0 IC = 10 µA, IC = 0 VCB = 75 V, IE = 0 VCE = 2 V, IC = 100 mA VCE = 2 V, IC = 500 mA IC = 500 mA, IB = 25 mA IC = 500 mA, IB = 25 mA VCB = 10 V, IE = -50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 120 40 0.11 0.8 90 12 20 0.30 1.2 V V MHz pF Min 150 150 5 0.1 340 Typ Max Unit V V V µA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank hFE1 R 120 to 240 S 170 to 340
0.4 max.
Publication date: December 2002
SJC00264BED
1
2SD2459
PC Ta
1.2 Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness
IC VCE
Ta = 25°C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
10 IC / IB = 20
1.2
Collector power dissipation PC (W)
1.0
1.0
Collector current IC (A)
1
0.8
0.8
IB = 8 mA 7 mA 6 mA 5 mA 4 mA
0.6
0.6 3 mA 2 mA 0.2 1 mA
0.1
Ta = 100°C 25°C -25°C
0.4
0.4
0.01
0.2
0
0
20
40
60
80 100 120 140 160
0
0
2
4
6
8
10
12
0.001 0.01
0.1
1
10
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) IC
100
hFE IC
500 VCE = 2 V
200
fT I E
Ta = 25°C VCB = 10 V
Base-emitter saturation voltage VBE(sat) (V)
IC / IB = 20
Forward current transfer ratio hFE
Transition frequency fT (MHz)
400
160
10
25°C 1 Ta = -25°C 100°C
300 Ta = 100°C 200 25°C -25°C 100
120
80
0.1
40
0.01 0.01
0.1
1
10
0 0.01
0.1
1
10
0 -1
-10
-100
Collector current IC (A)
Collector current IC (A)
Emitter current IE (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
60 Ta = 25°C f = 1 MHz IE = 0
50
40
30
20
10
0
1
10
100
Collector-base voltage VCB (V)
2
SJC00264BED
Others parts begin by 2s
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