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Part: 2SD2460

Category:
 Discrete
   -> Transistors
     -> Bipolar
       -> Audio Amplifier Application
         -> NPN

Description: Silicon NPN Epitaxial Planer Type ( For Low-frequency Output Amplification )

Company: Panasonic Industrial Company/Electronic Components

Datasheet: Download 2SD2460 datasheet     File size : 181 kB

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Datasheet text preview:
Transistor

2SD2460
Silicon NPN epitaxial planer type
For low-frequency output amplification
Unit: mm
4.0±0.2

s Features
q q q

0.7±0.1

s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC Tj T stg

(Ta=25°C)
Ratings 20 20 15 1.5 0.7 300 150 ­55 ~ +150 Unit V V V A A mW °C °C
1:Emitter 2:Collector 3:Base

1

2

3

1.27 1.27 2.54±0.15

EIAJ:SC­72 New S Type Package

s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance

(Ta=25°C)
Symbol ICBO ICEO VCBO VCEO VEBO hFE VCE(sat) fT C ob Conditions VCB = 15V, IE = 0 VCE = 15V, IB = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 150mA* IC = 500mA, IB = 50mA* VCB = 20V, IE = ­20mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 20 20 15 1000 0.15 55 10
*

min

typ

max 1 10

2.0±0.2

marking

+0.2 0.45 ­ 0.1

15.6±0.5

High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping.

3.0±0.2

Unit µA µA V V V

2500 0.4 V MHz 15 pF

Pulse measurement

1

Transistor
PC -- Ta
500 240 Ta=25°C 200

2SD2460
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
10 3 1 0.3 0.1 Ta=75°C 0.03 0.01 0.003 0.001 1 3 10 30 100 300 1000 25°C ­25°C

VCE(sat) -- IC
IC/IB=10

Collector power dissipation PC (mW)

Collector current IC (mA)

400

IB=100µA 90µA 80µA 70µA 60µA 50µA

160

300

120

200

80

40µA 30µA

100

40

20µA 10µA

0 0 20 40 60 80 100 120 140 160

0 0 2 4 6 8 10 12

Ambient temperature Ta (°C)

Collector to emitter voltage VCE (V)

Collector current IC (mA)

hFE -- IC
2400 24

Cob -- VCB
Collector output capacitance Cob (pF)
VCE=10V f=1MHz IE=0 Ta=25°C

Forward current transfer ratio hFE

2100 1800 1500 ­25°C 1200 900 600 300 0 1 3 10 30 100 300 1000 Ta=75°C 25°C

20

16

12

8

4

0 1 3 10 30 100

Collector current IC (mA)

Collector to base voltage VCB (V)

2




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