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Part: 2SD2465
Category: Discrete -> Transistors -> Bipolar -> Power -> Medium Power -> NPN
Description: Silicon NPN Epitaxial Planar Type ( For Low-voltage Switching )
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SD2465 datasheet File size : 196 kB
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Datasheet text preview:
Power Transistors
2SD2465, 2SD2465A
Silicon NPN epitaxial planar type
For low-voltage switching Complementar y to 2SB1603
Unit: mm
4.6±0.2 3.2±0.1 9.9±0.3 2.9±0.2
s Features
q q q
15.0±0.3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD2465 2SD2465A 2SD2465 Symbol V CBO V CEO V EBO ICP IC PC Tj T stg
(TC=25°C)
Ratings 40 50 20 40 5 8 4 25 2 150 55 to +150 Unit V
4.1±0.2 8.0±0.2 Solder Dip
3.0±0.2
Low collector to emitter saturation voltage VCE(sat) High-speed switching Full-pack package superior in insulation, which can be installed to the heat sink with one screw
13.70.2
+0.5
1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4
2.6±0.1 0.7±0.1
emitter voltage 2SD2465A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V A A W °C °C
7°
123
1:Base 2:Collector 3:Emitter TO220E Full Pack Package
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD2465 2SD2465A 2SD2465 2SD2465A
(TC=25°C)
Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 40V, IE = 0 VCB = 50V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.1A VCE = 2V, IC = 1A IC = 2A, IB = 0.1A IC = 2A, IB = 0.1A VCE = 5V, IC = 0.5A, f = 10MHz IC = 2A, IB1 = 0.2A, IB2 = 0.2A, VCC = 20V 120 0.2 0.5 0.1 20 40 45 90 260 0.5 1.5 V V MHz µs µs µs min typ max 50 50 50 Unit µA µA V
Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h
FE2
Rank classification
Q 90 to 180 P 130 to 260
Rank h FE2
1
Power Transistors
PC -- Ta
40 6 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2.0W) TC=25°C 5 IB=60mA 50mA 40mA 30mA 3 20mA 2 10mA 1 5mA 0 0 25 50 75 100 125 150 0 2 4 6 8 10 12
2SD2465, 2SD2465A
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=10 30 10 3 1 TC=100°C 0.3 0.1 0.03 0.01 0.01 0.03 25°C 25°C
VCE(sat) -- IC
Collector power dissipation PC (W)
35 30 25 20 15 10 5 0 (2) (3) (4) (1)
Collector current IC (A)
4
0.1
0.3
1
3
10
Ambient temperature Ta (°C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) -- IC
100 10000 IC/IB=10
hFE -- IC
10000 VCE=2V 3000 1000 300 100 30 10 3 1 0.01 0.03
fT -- IC
VCE=5V f=10MHz TC=25°C
Base to emitter saturation voltage VBE(sat) (V)
Forward current transfer ratio hFE
10 3 25°C 1 0.3 0.1 0.03 0.01 0.01 0.03 TC = 2 5 ° C 100°C
1000 300 100 25°C 30 10 3 1 0.1 TC=100°C 25°C
0.1
0.3
1
3
10
0.3
1
3
10
30
100
Transition frequency fT (MHz)
30
3000
0.1
0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
ton, tstg, tf -- IC
10 Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=IB2) VCC=20V TC=25°C tstg
Area of safe operation (ASO)
100 30 Non repetitive pulse TC=25°C
Switching time ton,tstg,tf (µs)
3
Collector current IC (A)
10 ICP IC 3 10ms 1 0.3 0.1 0.03 DC t=1ms
1
0.3
ton tf
0.1
0.03
0.01 0 1 2 3 4 5 6 7 8
0.01 1 3 10
30
2SD2465A
100
2SD2465
300
1000
Collector current IC (A)
Collector to emitter voltage VCE (V)
2
Power Transistors
Rth(t) -- t
102 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1)
2SD2465, 2SD2465A
Thermal resistance Rth(t) (°C/W)
10
(2)
1
101
102 104
103
102
101
1
10
102
103
104
Time t (s)
3
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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