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Part: 2SD2465

Category:
 Discrete
   -> Transistors
     -> Bipolar
       -> Power
         -> Medium Power
             -> NPN

Description: Silicon NPN Epitaxial Planar Type ( For Low-voltage Switching )

Company: Panasonic Industrial Company/Electronic Components

Datasheet: Download 2SD2465 datasheet     File size : 196 kB

Request For quote: Find where to buy 2SD2465



Datasheet text preview:
Power Transistors

2SD2465, 2SD2465A
Silicon NPN epitaxial planar type
For low-voltage switching Complementar y to 2SB1603
Unit: mm
4.6±0.2 3.2±0.1 9.9±0.3 2.9±0.2

s Features
q q q

15.0±0.3

s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD2465 2SD2465A 2SD2465 Symbol V CBO V CEO V EBO ICP IC PC Tj T stg

(TC=25°C)
Ratings 40 50 20 40 5 8 4 25 2 150 ­55 to +150 Unit V

4.1±0.2 8.0±0.2 Solder Dip

3.0±0.2

Low collector to emitter saturation voltage VCE(sat) High-speed switching Full-pack package superior in insulation, which can be installed to the heat sink with one screw

13.7­0.2

+0.5

1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4

2.6±0.1 0.7±0.1

emitter voltage 2SD2465A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature

V V A A W °C °C


123

1:Base 2:Collector 3:Emitter TO­220E Full Pack Package

s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD2465 2SD2465A 2SD2465 2SD2465A

(TC=25°C)
Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 40V, IE = 0 VCB = 50V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.1A VCE = 2V, IC = 1A IC = 2A, IB = 0.1A IC = 2A, IB = 0.1A VCE = 5V, IC = 0.5A, f = 10MHz IC = 2A, IB1 = 0.2A, IB2 = ­ 0.2A, VCC = 20V 120 0.2 0.5 0.1 20 40 45 90 260 0.5 1.5 V V MHz µs µs µs min typ max 50 50 50 Unit µA µA V

Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h

FE2

Rank classification
Q 90 to 180 P 130 to 260

Rank h FE2

1

Power Transistors
PC -- Ta
40 6 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2.0W) TC=25°C 5 IB=60mA 50mA 40mA 30mA 3 20mA 2 10mA 1 5mA 0 0 25 50 75 100 125 150 0 2 4 6 8 10 12

2SD2465, 2SD2465A
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=10 30 10 3 1 TC=100°C 0.3 0.1 0.03 0.01 0.01 0.03 25°C ­25°C

VCE(sat) -- IC

Collector power dissipation PC (W)

35 30 25 20 15 10 5 0 (2) (3) (4) (1)

Collector current IC (A)

4

0.1

0.3

1

3

10

Ambient temperature Ta (°C)

Collector to emitter voltage VCE (V)

Collector current IC (A)

VBE(sat) -- IC
100 10000 IC/IB=10

hFE -- IC
10000 VCE=2V 3000 1000 300 100 30 10 3 1 0.01 0.03

fT -- IC
VCE=5V f=10MHz TC=25°C

Base to emitter saturation voltage VBE(sat) (V)

Forward current transfer ratio hFE

10 3 25°C 1 0.3 0.1 0.03 0.01 0.01 0.03 TC = ­ 2 5 ° C 100°C

1000 300 100 ­25°C 30 10 3 1 0.1 TC=100°C 25°C

0.1

0.3

1

3

10

0.3

1

3

10

30

100

Transition frequency fT (MHz)

30

3000

0.1

0.3

1

3

10

Collector current IC (A)

Collector current IC (A)

Collector current IC (A)

ton, tstg, tf -- IC
10 Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=­IB2) VCC=20V TC=25°C tstg

Area of safe operation (ASO)
100 30 Non repetitive pulse TC=25°C

Switching time ton,tstg,tf (µs)

3

Collector current IC (A)

10 ICP IC 3 10ms 1 0.3 0.1 0.03 DC t=1ms

1

0.3

ton tf

0.1

0.03

0.01 0 1 2 3 4 5 6 7 8

0.01 1 3 10

30

2SD2465A
100

2SD2465

300

1000

Collector current IC (A)

Collector to emitter voltage VCE (V)

2

Power Transistors
Rth(t) -- t
102 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1)

2SD2465, 2SD2465A

Thermal resistance Rth(t) (°C/W)

10

(2)

1

10­1

10­2 10­4

10­3

10­2

10­1

1

10

102

103

104

Time t (s)

3




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