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Part: 2SD2468

Category:
 Discrete
   -> Transistors
     -> Bipolar
       -> Power
         -> Medium Power
             -> NPN

Description: Silicon NPN Epitaxial Planar Type ( For Power Switching )

Company: Panasonic Industrial Company/Electronic Components

Datasheet: Download 2SD2468 datasheet     File size : 196 kB

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Datasheet text preview:
Power Transistors

2SD2468
Silicon NPN epitaxial planar type
For power switching
Unit: mm
4.6±0.2

s Features
q q q q

3.2±0.1

9.9±0.3

2.9±0.2

4.1±0.2 8.0±0.2 Solder Dip

Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25°C)
Ratings 130 80 7 8 4 35 2 150 ­55 to +150 Unit V V V A A W °C °C

15.0±0.3

3.0±0.2

s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC Tj T stg

13.7­0.2

+0.5

1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4

2.6±0.1 0.7±0.1



123

1:Base 2:Collector 3:Emitter TO­220E Full Pack Package

s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h

(TC=25°C)
Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 100V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.1A VCE = 2V, IC = 1A IC = 3A, IB = 0.15A IC = 3A, IB = 0.15A VCE = 10V, IC = 0.5A, f = 10MHz IC = 1A, IB1 = 0.1A, IB2 = ­ 0.1A, VCC = 50V 30 0.5 2.5 0.15 80 45 90 260 0.5 1.5 V V MHz µs µs µs min typ max 10 50 Unit µA µA V

FE2

Rank classification
Q 90 to 180 P 130 to 260

Rank h FE2

1

Power Transistors
PC -- Ta
50 8 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25°C 7 IB=300mA 140mA 120mA 100mA 60mA 40mA 3 2 1 0 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 20mA 10mA

2SD2468
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
10 IC/IB=20 3 1 0.3 0.1 0.03 0.01 0.003 0.001 0.01 0.03 25°C ­25°C TC=100°C

VCE(sat) -- IC

Collector power dissipation PC (W)

Collector current IC (A)

40 (1) 30

6 5 4

20

10

(2) (3) (4)

0

0.1

0.3

1

3

10

Ambient temperature Ta (°C)

Collector to emitter voltage VCE (V)

Collector current IC (A)

VBE(sat) -- IC
100 10000 IC/IB=20

hFE -- IC
10000 VCE=2V 3000 1000 300 100 30 10 3 1 0.01 0.03

fT -- IC
VCE=10V f=10MHz TC=25°C

Base to emitter saturation voltage VBE(sat) (V)

Forward current transfer ratio hFE

10 3 1 0.3 0.1 0.03 TC=100°C ­25°C 25°C

1000 300 100 ­25°C 30 10 3 1 0.01 0.03

TC=100°C 25°C

0.0.1 0.01 0.03

0.1

0.3

1

3

10

0.1

0.3

1

3

10

Transition frequency fT (MHz)

30

3000

0.1

0.3

1

3

10

Collector current IC (A)

Collector current IC (A)

Collector current IC (A)

Cob -- VCB
10000 100 IE=0 f=1MHz TC =25°C 30

ton, tstg, tf -- IC
Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=­IB2) VCC=50V TC=25°C

Area of safe operation (ASO)
100 30 Non repetitive pulse TC=25°C ICP IC 3 1 DC 0.3 0.1 0.03 0.01 10ms 1ms t=0.5ms

Collector output capacitance Cob (pF)

3000 1000 300 100 30 10 3 1 0.1

Switching time ton,tstg,tf (µs)

Collector current IC (A)
5

10 3 1 0.3 ton 0.1 0.03 0.01

10

tstg tf

0.3

1

3

10

30

100

0

1

2

3

4

1

3

10

30

100

300

1000

Collector to base voltage VCB (V)

Collector current IC (A)

Collector to emitter voltage VCE (V)

2

Power Transistors
Rth(t) -- t
103 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1)

2SD2468

Thermal resistance Rth(t) (°C/W)

102

10

(2)

1

10­1

10­2 10­4

10­3

10­2

10­1

1

10

102

103

104

Time t (s)

3




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