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Part: 2SD2479
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: V<SUB>CEO</SUB>(V) = 100 ;; I<SUB>C</SUB>(A) = 2 ;; HFE(min) = 4000 ;; HFE(max) = 40000 ;; Package = MT-3-A1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SD2479 datasheet File size : 196 kB
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Datasheet text preview:
Power Transistors
2SD2479
Silicon NPN epitaxial planar type
Unit: mm
For low-frequency amplification
10.8±0.2
7.5±0.2 3.8±0.2
4.5±0.2
Features
· High forward current transfer ratio hFE · Allowing supply with the radial taping
0.65±0.1 2.5±0.1
0.85±0.1 1.0±0.1 0.8 C
90°
0.8 C
16.0±1.0
0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO IC ICP PC Tj Tstg Rating 120 100 5 2 3 1.5 150 -55 to +150 Unit V V V A A W °C °C
0.5±0.1 0.8 C 1 2 3 2.05±0.2
0.4±0.1
2.5±0.2
2.5±0.2
1: Emitter 2: Collector 3: Base MT-3-A1 Package
Internal Connection
B C
E 200
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio *1, 2 Collector-emitter saturation voltage Base-emitter saturation voltage *1 Transition frequency
*1
Symbol V CBO V CEO V EBO ICBO IEBO h FE V CE(sat) V BE(sat) fT
Conditions IC = 100 µA, IE = 0 IC = 1 mA, IB = 0 IE = 100 µA, IC = 0 VCB = 25 V, IE = 0 VEB = 4 V, IC = 0 VCE = 10 V, IC = 1 A IC = 1 A, IB = 1 mA IC = 1 A, IB = 1 mA VCB = 10 V, IE = -50 mA, f = 200 MHz
Min 120 100 5
Typ
Max
Unit V V V µA µA V V MHz
0.1 1 4 000 40 000 1.5 2 150
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1 : Pulse measurement *2 : Rank classification Rank hFE Q R S
4 000 to 10 000 8 000 to 20 000 16 000 to 40 000
Publication date: February 2003
SJD00269BED
1
2SD2479
PC Ta
1.6 Ta = 25°C 4 1.2
IC VCE
1.2 IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 2 0.3 mA
IC VBE
VCE = 10 V
Collector power dissipation PC (mW)
Collector current IC (A)
Collector current IC (A)
Ta = 85°C 0.8 25°C
3
0.8
-25°C 0.4
0.4
0.2 mA 1 0.1 mA
0 0 40 80 120 160
0
0
2
4
6
8
10
12
0
0
1
2
3
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
VBE(sat) IC
Base-emitter saturation voltage VBE(sat) (V)
IC / IB = 1 000
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 1 000
hFE IC
10 000 VCE = 10 V
10
Forward current transfer ratio hFE
8 000 Ta = 85°C 6 000 25°C 4 000 -25°C 2 000
Ta = -25°C 25°C 1 85°C
10
Ta = 85°C 25°C
1
-25°C
0.1
1
10
102
103
104
0.1
1
10
102
103
104
0 1 10
102
103
104
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
1 000 f = 1 MHz Ta = 25°C
100
10
0
10
20
30
40
Collector-base voltage VCB (V)
2
SJD00269BED
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