|
|
Part: 2SD638
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
Description: V<SUB>CEO</SUB>(V) = 25 ;; I<SUB>C</SUB>(A) = 0.5 ;; HFE(min) = 85 ;; HFE(max) = 340 ;; Package = M-A1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SD638 datasheet File size : 130 kB
Request For quote: Find where to buy 2SD638
Datasheet text preview:
Transistors
2SD0638 (2SD638)
Silicon NPN epitaxial planar type
For medium-power general amplification Complementary to 2SB0643 (2SB643)
(0.4)
(1.5) (1.5)
Unit: mm
6.9±0.1 2.5±0.1 (1.0)
2.0±0.2
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
*
1.0±0.1
(0.85)
2.4±0.2
0.45±0.05
V CBO V CEO V EBO IC ICP PC Tj Tstg
30 25 7 0.5 1 600 150 -55 to +150
V V V A A mW °C °C
3 (2.5) 2 (2.5) 1
1.25±0.05
Symbol
Rating
Unit
0.55±0.1
1: Base 2: Collector 3: Emitter M-A1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Base-emitter saturation voltage Forward current transfer ratio Symbol V CBO V CEO V EBO ICBO ICEO hF E 1 * h FE2 Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) V CE(sat) fT Co b Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 IE = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 20 V, IB = 0 VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 500 mA IC = 300 mA, IB = 30 mA VCB = 10 V, IE = -50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 85 40 90 0.35 200 6 15 0.6 V MHz pF Min 30 25 7 0.1 1 340 Typ Max Unit V V V µA µA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 Q 85 to 170 R 120 to 240 S 170 to 340
Note) The part number in the parenthesis shows conventional part number.
Publication date: November 2002 SJC00193BED
4.1±0.2
· Low collector-emitter saturation voltage VCE(sat) · M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
3.5±0.1
Features
(1.0) 4.5±0.1
R 0.9 R 0.7
1
2SD0638
PC Ta
800 800 700
IC VCE
Ta = 25°C IB = 10 mA 9 mA 8 mA 7 mA 6 mA 5 mA 4 mA 400 300 200 100 0 3 mA 2 mA 1 mA 800 700
IC I B
VCE = 10 V Ta = 25°C
Collector power dissipation PC (mW)
700
Collector current IC (mA)
600 500 400 300 200 100 0
600 500
Collector current IC (mA)
600 500 400 300 200 100 0
0
20
40
60
80 100 120 140 160
0
4
8
12
16
20
0
2
4
6
8
10
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Base current IB (mA)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100
VBE(sat) IC
100
hFE IC
300 VCE = 10 V
Base-emitter saturation voltage VBE(sat) (V)
IC / IB = 10
IC / IB = 10
Forward current transfer ratio hFE
250
10
10
Ta = 75°C 25°C -25°C
200
25°C 1 Ta = -25°C 75°C
1 Ta = 75°C 25°C 0.1 -25°C
150
100
0.1
50
0.01 0.01
0.1
1
10
0.01 0.01
0.1
1
10
0 0.01
0.1
1
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
fT I E
Collector output capacitance C (pF) (Common base, input open circuited) ob
240 VCB = 10 V Ta = 25°C
Cob VCB
12 IE = 0 f = 1 MHz Ta = 25°C
104
IC B O T a
VCE = 10 V
Transition frequency fT (MHz)
200
10
103
8
ICEO (Ta) ICEO (Ta = 25°C)
160
120
6
102
80
4
10
40
2
0 -1
-10
-100
0
1
1
10
100
0
40
80
120
160
200
Emitter current IE (mA)
Collector-base voltage VCB (V)
Ambient temperature Ta (°C)
2
SJC00193BED
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
|
|
|
