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Part: 2SK1374
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
Description: Marking = 4V ;; V<SUB>DS</SUB>(V) = 50 ;; V<SUB>DSS</SUB>(V) = ;; I<SUB>D</SUB>(A) = 0.05 ;; R<SUB>DS</SUB>(on) (typ)(W ) = 27 ;; R<SUB>DS</SUB>(on) (max)(W ) = 50 ;; Package = SMini3-G1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SK1374 datasheet File size : 258 kB
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Datasheet text preview:
Silicon MOS FETs (Small Signal)
2SK1374
Silicon N-Channel MOS FET
For switching
unit: mm
(0.425)
I Features
01 0.3+0..0
0 10 0.15+0..05
G High-speed switching G Wide frequency band G Incorporating a built-in gate protection-diode G Allowing 2.5V drive
3
1.25±0.10
2.1±0.1 5°
1
2
(0.65) (0.65)
I Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol V DS V GSO ID I DP PD T ch Tstg Ratings 50 10 50 100 150 150 -55 to +150 Unit V V mA mA mW °C °C
1: Gate 2: Source 3: Drain
10°
1.3±0.1 2.0±0.2
0 to 0.1
0.9±0.1
02 0.9+0..1
EIAJ: SC-70 SMini3-G1 Package
Marking Symbol: 4V
I Electrical Characteristics (Ta = 25°C)
Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Symbol I DSS I GSS VDSS Vth RDS(on) | Yfs | C oss t on * 2 toff*2
*1
Conditions VDS = 20V, VGS = 0 VGS = 10V, VDS = 0 ID = 10µA, VGS = 0 ID = 100µA, VDS = 5V ID = 10mA, VGS = 2.5V ID = 10mA, VDS = 5V, f = 1kHz VDS = 5V, VGS = 0, f = 1MHz VDD = 5V, VGS = 0 to 2.5V, RL = 470 VDD = 5V, VGS = 2.5 to 0V, RL = 470
min
typ
max 1 1
Unit µA µA V V mS pF pF pF µs µs
50 0.5
100 0.8 27 1.1 50
20
39 4.5 4.1 1.2 0.2 0.2
Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time Turn-off time
*1 *2
Pulse measurement t on, toff measurement circuit
Vout 470 Vin VDD = 5V Vout 10% 10% 90% ton toff 90%
50
100µF
VGS = 2.5V
0.2±0.1
295
Silicon MOS FETs (Small Signal)
PD Ta
240 48
2SK1374
ID VDS
60
| Yfs | VGS
Forward transfer admittance |Yfs| (mS)
Ta=25°C VDS=5V f=1kHz Ta=25°C
Allowable power dissipation PD (mW)
200
40
50
160
Drain current ID (mA)
32
VGS=1.8V
40
120
24 1.6V 16
30
80
1.4V 1.2V 1.0V
20
40
8
10
0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8 10 12
0 0 1 2 3 4 5 6
Ambient temperature Ta (°C)
Drain to source voltage VDS (V)
Gate to source voltage VGS (V)
Ciss, Coss, Crss VDS
Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
12 120
ID VGS
VDS=5V
RDS(on) VGS
Drain to source ON-resistance RDS(on) ()
120 I D= 1 0 m A 100
10
100
Drain current ID (mA)
Ta=25°C 80 25°C 75°C 60
8
80
6 Coss 4 Ciss 2 Crss 0 1 3 10 30 100 300 1000
60 Ta=75°C 40 25°C 25°C 20
40
20
0 0 1 2 3 4 5 6
0 0 1 2 3 4 5 6
Drain to source voltage VDS (V)
Gate to source voltage VGS (V)
Gate to source voltage VGS (V)
VIN IO
100 30 VO=5V Ta=25°C
Input voltage VIN (V)
10 3 1 0.3 0.1 0.03 0.01 0.1
0.3
1
3
10
30
100
Output current IO (mA)
296
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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