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Part: 2SK1842
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> JFETs (Junction-FETs)
-> Small Signal
Description: Application = Infrared Sensor ;; V<SUB>DSO</SUB><SUP></SUP>V<SUB>GDS</SUB>(V) = VGDO-40 ;; I<SUB>D</SUB>(mA) = ±1 ;; NV<SUP>2</SUP>NFConditionV<SUB>DS</SUB>(V) = 10 ;; NV<SUP>2</SUP>NFmax<SUP>3</SUP>typ(mV) = Ciss31pF ;; I<SUB>DSS</SUB>max.(mA) = 0.2 ;; Package = Mini3-G1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SK1842 datasheet File size : 205 kB
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Datasheet text preview:
Silicon Junction FETs (Small Signal)
2SK1842
Silicon N-Channel Junction FET
For impedance conversion in low frequency For infrared sensor s Features
q Low gate to source leakage current, IGSS q Small capacitance of Ciss, Coss, Crss q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
Unit: mm
0 10 0.40+0..05 0 10 0.16+0..06
3
0 25 1.50+0..05 02 2.8+0..3
1
2
(0.95) (0.95) 1.9±0.1
0 20 2.90+0..05
s Absolute Maximum Ratings (Ta = 25°C)
Parameter Gate to Drain voltage Gate to Source voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature Symbol V GDO V GSO ID IG PD Tj Tstg Ratings -40 -40 1 10 150 150 -55 to +150 Unit V V mA mA mW °C °C
10°
02 1.1+0..1 03 1.1+0..1
1: Source 2: Drain 3: Gate
0 to 0.1
(0.65)
JEDEC: TO-236 EIAJ: SC-59 Mini3-G1 Package
Marking Symbol (Example): EB
s Electrical Characteristics (Ta = 25°C)
Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Drain voltage Gate to Source cut-off voltage Forward transfer admittance Symbol I DSS I GSS V GDS V GSC | Yfs | C oss
*
Conditions VDS = 10 V, VGS = 0 VGS = -20 V, VDS = 0 IG = -10 µA, VDS = 0 VDS = 10 V, ID = 1 µA VDS = 10 V, VGS = 0, f = 1 kHz VDS = 10 V, VGS = 0, f = 1 MHz
min 30 -40
typ
max 200 - 0.5
Unit µA nA V
-1 . 3 0.05 1 0.4 0.4
-3
V mS pF pF pF
Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss
*
IDSS rank classification Runk IDSS (mA) O 30 to 75 EBP P 50 to 100 EBQ Q 70 to 130 EBR R 100 to 200 EBS
Marking Symbol
0.4±0.2
5°
Publication date: January 2002
SJF00013BED
1
2SK1842
PD T a
240 240
ID VDS
Ta = 25°C
ID VGS
240 VDS = 10 V
Allowable power dissipation PD (mW)
200
200
200
VGS = 0.4 V
Drain current ID (µA)
160
160
Drain current ID (µA)
160
120
120
0.2 V 0V
120
80
80
- 0.2 V - 0.4 V
80
40
0
- 0.6 V
40 Ta = 75°C -25°C - 0.8 - 0.4
25°C
0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8 10 12
0 -1.2
0
0.4
Ambient temperature Ta (°C)
Drain to source voltage VDS (V)
Gate to source voltage VGS (V)
| Yfs | VGS
1.2
| Yfs | ID
240 1.2
Ciss, Coss, Crss VDS
VDS = 10 V Ta = 25°C VGS = 0 V Ta = 25°C f = 1 MHz
Forward transfer admittance |Yfs| (mS)
Forward transfer admittance |Yfs| (mS)
1.0
200
Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
VDS = 10 V f = 1 kHz Ta = 25°C
1.0
0.8
160 IDSS = 100 µA
0.8
Ciss
0.6 IDSS = 100 µA
120
0.6
0.4
80
0.4
Crss Coss
0.2
40
0.2
0 -1.2
- 0.8
- 0.4
0 0 0.4 0 40 80 120 160 200 240
0 0 2 4 6 8 10 12
Gate to source voltage VGS
(V)
Drain current ID
(µA)
Drain to source voltage VDS (V)
2
SJF00013BED
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