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Part: 2SK3030
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
Description: V<SUB>DSS</SUB>(V) = 100 ;; I<SUB>D</SUB>(A) = 8 ;; R<SUB>DS</SUB>(on) (max)(W ) = 0.23 ;; R<SUB>DS</SUB>(on) (max) (V<SUB>GS</SUB>=4V)(W ) = 0.26 ;; Package = U-A1U-G2
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SK3030 datasheet File size : 3633 kB
Request For quote: Find where to buy 2SK3030
Datasheet text preview:
Power F-MOS FETs
2SK3030 (Tentative)
Silicon N-Channel Power F-MOS FET
I Features
G Avalanche energy capacity guaranteed G High-speed switching G Low ON-resistance G No secondary breakdown G Low-voltage drive G High electrostatic breakdown voltage
unit: mm
6.5±0.1 5.3±0.1 4.35±0.1 2.3±0.1 0.5±0.1
G Contactless relay G Diving circuit for a solenoid G Driving circuit for a motor G Control equipment G Switching power supply
0.8 max.
I Applications
7.3±0.1
1.8±0.1
2.5±0.1
2 1 4.6±0.1 3
1.0±0.1 0.1±0.05 0.5±0.1 (5.3) (4.35) (3.0)
0.75±0.1 2.3±0.1
I Absolute Maximum Ratings (TC = 25°C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID I DP EAS* PD T ch Tstg Ratings 100 ±20 ±8 ±16 3.2 10 1 150 -55 to +150 Unit V V A A mJ
1 2 3
(1.8)
1.0±0.2
1: Gate 2: Drain 3: Source U-G1 Package
Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature
*
TC = 25°C Ta = 25°C
Internal Connection
W °C °C
S G D
L = 0.1mH, IL = 8A, 1 pulse
I Electrical Characteristics (TC = 25°C)
Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol I DSS I GSS VDSS Vth RDS(on)1 RDS(on)2 | Yfs | VDSF C oss t d(on) tr tf t d(off) R th(ch-c) R th(ch-a) VDD = 30V, ID = 4A VGS = 10V, RL = 7.5 Conditions VDS = 80V, VGS = 0 VGS = ±20V, VDS = 0 ID = 1mA, VGS = 0 VDS = 10V, ID = 1mA VGS = 10V, ID = 4A VGS = 4V, ID = 4A VDS = 10V, ID = 4A IDR = 8A, VGS = 0 290 VDS = 10V, VGS = 0, f = 1MHz 110 30 15 40 190 860 12.5 125 3 100 1 150 170 6 -1 . 5 2.5 230 260 min typ max 10 ±10 Unit µA µA V V m m S V pF pF pF ns ns ns ns °C/W °C/W
Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time (delay time) Rise time Fall time Turn-off time (delay time) Thermal resistance between channel and case Thermal resistance between channel and atmosphere
(5.5)
187
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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