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Part: 2SK3033

Category:
 Discrete
   -> Transistors
     -> FETs (Field Effect Transistors)
       -> MOSFETs
         -> N-Channel

Description: Silicon N-channel Power F-mosFET

Company: Panasonic Industrial Company/Electronic Components

Datasheet: Download 2SK3033 datasheet     File size : 3633 kB

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Datasheet text preview:
Power F-MOS FETs

2SK3033 (Tentative)
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage
unit: mm
4.6±0.2 3.2±0.1 9.9±0.3 2.9±0.2

4.1±0.2 8.0±0.2 Solder Dip

13.7­0.2

q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply

15.0±0.3

3.0±0.2

s Applications

+0.5

1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4 123

2.6±0.1 0.7±0.1

s Absolute Maximum Ratings (TC = 25°C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tc h Tstg Ratings 100 ±20 ±40 ±80 80 60 2 150 -55 to +150 Unit V V A A mJ

7

1: Gate 2: Drain 3: Source TO-220E Package

Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature
*

TC = 25°C Ta = 25°C

Internal Connection
W °C °C
S G D

L = 0.1mH, IL = 40A, 1 pulse

s Electrical Characteristics (TC = 25°C)
Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on)1 RDS(on)2 | Yfs | VDSF C oss td ( o n ) tr tf td ( o f f ) R th(ch-c) R th(ch-a) VDD = 30V, ID = 20A VGS = 10V, RL = 1.5 Conditions VDS = 80V, VGS = 0 VGS = ±20V, VDS = 0 ID = 1mA, VGS = 0 VDS = 10V, ID = 1mA VGS = 10V, ID = 20A VGS = 4V, ID = 20A VDS = 10V, ID = 20A IDR = 20A, VGS = 0 2400 VDS = 10V, VGS = 0, f = 1MHz 530 220 12 20 120 600 2.08 62.5 13 100 1 35 40 26 -1 . 4 2.5 60 75 min typ max 10 ±10 Unit µA µA V V m m S V pF pF pF ns ns ns ns °C/W °C/W

Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time (delay time) Rise time Fall time Turn-off time (delay time) Thermal resistance between channel and case Thermal resistance between channel and atmosphere

1




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