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Part: 2SK3731
Category:
Description: Power Device - Power MOS Fets
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download 2SK3731 datasheet File size : 204 kB
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Datasheet text preview:
Power MOSFETs
2SK3731
N-channel enhancement mode MOSFET
Features
· Low on-resistance, low Qg · High avalanche resistance
(1.4)
Unit: mm
10.5±0.3 4.6±0.2 1.4±0.1
0 . 6± 0 . 1
3 . 0± 0 . 5 0 to 0.5
· For PDP · For high-speed switching
1.4±0.1 0.8±0.1 2.54±0.3 2.5±0.2
0 to 0.3
Absolute Maximum Ratings TC = 25°C
1 2 3
(10.2) (8.9)
(6.4) (1.4)
Parameter Drain-source surrender voltage G a t e - s o u r c e surrender voltage D r a i n current P e a k drain current Avalanche energy capability Power dissipation Ta = 25°C C h a n n e l temperature S t o r a g e temperature
*
Symbol VDSS VGSS ID IDP EAS PD Tch Tstg
Rating 230 ±30 20 80 668 50 1.4 150 - 5 5 to +150
Unit V V A A mJ W
(2.1)
1: Gate 2: Drain 3: Source TO-220C-G1 Package
Marking Symbol: K3731
°C °C
Note) *: L = 2.79 mH, IL = 20 A, VDD = 50 V, 1 pulse, Ta = 25°C
Electrical Characteristics TC = 25°C ± 3°C
Parameter D r a i n - s o u r c e surrender voltage Gate threshold voltage D r a i n - s o u r c e cutoff current G a t e - s o u r c e cutoff current Drain-source ON resistance Forward transfer admittance Short-circuit forward transfer capacitance (Common-source) Short-circuit output capacitance (Common-source) Reverse transfer capacitance (Common-source) Turn-on delay time Rise time Turn-off delay time Fall time Symbol VDSS V th IDSS IGSS RDS(on) Yfs C iss Coss Cr s s t d(on) Tr td(off) tf VDD 100 V, ID = 10 A RL = 10 , VGS = 10 V Conditions ID = 1 mA, VGS = 0 VDS = 10 V, ID = 1 mA VDS = 184 V, VGS = 0 VGS = ±30 V, VDS = 0 VGS = 10 V, ID = 10 A VDS = 10 V, ID = 10 A VDS = 25 V, VGS = 0, f = 1 MHz 7 65 14 2 360 394 49 31 27 214 47 Min 230 2.0 4.0 10 ±1 82 Typ Max Unit V V µA µA m S pF pF pF ns ns ns ns
1.5±0.3
Applications
10.1±0.3
Publication date: March 2004
SJG00038AED
1
2SK3731
Electrical Characteristics (continued) TC = 25°C ± 3°C
Parameter Diode foward voltage Reverse recovery time Reverse recovery charge Gate charge load Gate-source charge Gate-drain charge Thermal resistance (ch-c) Thermal resistance (ch-a) Symbol VDSF trr Qrr Qg Qgs Qg d Rth(ch-c) Rth(ch-a) Conditions IDR = 20 A, VGS = 0 L = 230 µH, VDD = 100 V IDR = 10 A, di/dt = 100 A/µs VDD = 100 V, ID = 10 A VGS = 10 V 142 668 43 6.6 16 2.5 89.2 Min Typ Max -1.5 Unit V ns nC nC nC nC °C/W °C/W
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Safe operation area
1 000 Non repetitive pulse TC = 25°C ID P ID 10 t = 100 µs t= 1 ms t= 10 ms DC
PC Ta
100 (1) TC = Ta (2) Without heat sink
100
Collector power dissipation PC (W)
Drain current ID (A)
50 (1)
1
10-1
(2)
10-2 1 10 100 1 000
0
0
25
50
75
100
125
150
Drain-source voltage VDS (V)
Ambient temperature Ta (°C)
2
SJG00038AED
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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