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Details, datasheet, quote on part number:GN01010
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Datasheet text preview:
GaAs MMICs
GN01010 (GN1010)
GaAs N-Channel MES IC
02 2.9+0..05
Unit: mm
For high-output high-gain amplification I Features
· General-use wide-band amplifier · Low noise · With bandwidth control pin
01 0.4+0..05
1.9±0.1 (0.95) (0.95) 3 4
02 1.5+0..3 02 2.8+0..3
01 0.16+0..06
R(0.5)
2 (1.45)
1
(0.65) 0.4±0.2
5°
(0.8)
Parameter Power supply voltage
Symbol VDS VGS ID IG PD Tc h Tstg
Rating 6 -4 45 3 200 150 -55 to +150
Unit V V mA mA mW °C °C 3 4
0 to 0.1
Drain current Gate current Allowable power dissipation Channel temperature Storage temperature
1: Source 2: Drain 3: C 4: Gate Minii4-G2 Type Package
Equivalent Circuit
2
02 1.1+0..1
I Absolute Maximum Ratings Ta = 25°C
7°
I Electrical Characteristics Ta = 25°C
Parameter Drain current *1 Noise figure
*2
1 Conditions V DS = 3 V VDS = 3 V, f = 0.5 GHz VDS = 3 V, f = 1.8 GHz VDS = 3 V, f = 0.5 GHz VDS = 3 V, f = 1.8 GHz VDS = 3 V, f = 0.5 GHz VDS = 3 V, f = 1.8 GHz 5 Min 5 Typ 30 2 Max 45 3 Unit mA dB
Symbol IDD NF
Power gain *2 IdB compression output *2
PG
10 9
dB
PO
8
15
dB
Note) *1 : IDD rank classification Rank IDD (mA) P 5 to 20 Q 15 to 30 R 25 to 45
*2: NF, PG, PO test circuit
VD C C Cf CC S G C = 1 000 pF CC = 200 pF Cf = 27 pF CC
Note) The part number in the parenthesis shows conventional part number.
1
GN01010
PG, NF f
12 VDD = 3 V TC = 25°C 10 PG
30
GaAs MMICs
S21, S12 f
Forward transfer gain, Reverse transfer gain S21, S21 (dB)
S11, S22 f
20
20 S21
8
10
Forward transfer gain, Reverse transfer gain S11, S22 (dB)
VDD = 3 V TC = 25°C
VDD = 3 V TC = 25°C
10
Noise figure NF (dB)
Power gain PG (dB)
0 S22
6 NF 4
0 S12
-10
-10
-20
S11
2
-20
-30
0 0.1
0.3
1
3
10
-30 10
30
100 300 1 000
3 000 10 000
-40 10
30
100 300 1 000
3 000 10 000
Frequency f (GHz)
Frequency f (MHz)
Frequency f (MHz)
NF, PG f
20 VDD = 3 V TC = 25°C
40
POUT , IM2 , IM3 PIN
VDD = 3 V Cf = 27 pF I.P
Noise figure NF (dB)
3 PG 2 NF 1 10
Power gain PG (dB)
20
POUT , IM2 , IM3 (dBm)
0 POUT
20
0 0.1 0.3 0.5 1.0 2.0
0
-40
IM2
IM3
Frequency f (GHz)
-60 -90 MHz -500 MHz -1 800 MHz -40 -20 0 20
-80
PIN (dBm)
2
Caution for Safety
Gallium arsenide material (GaAs) is used in this product.
DANGER
Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products.
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