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Part: MA3X717DMA717WA
Category:
Discrete
-> Diodes & Rectifiers
-> Schottky Diodes
Description: V<SUB>RM</SUB>(V) = 30 ;; I<SUB>F</SUB>(mA) = 30 ;; V<SUB>F</SUB>max.(V) = 0.3 ;; I<SUB>R</SUB>(µA) = 30 ;; Package = Mini3-G1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download MA3X717DMA717WA datasheet File size : 35 kB
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Datasheet text preview:
Schottky Barrier Diodes (SBD)
MA3X717D, MA3X717E (MA717WA, MA717WK)
Silicon epitaxial planar type
Unit: mm
For switching s Features
· Two MA3X717 (MA717) is contained in one package · Low forward voltage VF, optimum for low voltage rectification · L o w V F type of MA3X704D, MA3X704E (MA704WA, MA704WK) · Optimum for high frequency rectification because of its short reverse recovery time (trr) · Mini type 3-pin package
10°
02 1.1+0..1 03 1.1+0..1
0 10 0.40+0..05 0 10 0.16+0..06
3
0 25 1.50+0..05 02 2.8+0..3
1
2
(0.95) (0.95) 1.9±0.1
0 20 2.90+0..05
s Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Single Double * y Peak forward current Single Double * y Junction temperature Storage temperature Note) *: Value per chip Tj Tstg IFM Symbol VR VRM IF Rating 30 30 30 20 150 110 125 -55 to +125 °C °C mA Unit V V mA
EIAJ: SC-59 Mini3-G1 Package
0 to 0.1
(0.65)
MA3X717D 1 Cathode 2 Cathode 3 Anode
MA3X717E Anode Anode Cathode
Marking Symbol · MA3X717D: M3E · MA3X717E: M3D Internal Connection
3
3
s Electrical Characteristics Ta=25°C
Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time * Detection efficiency Ct t rr VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA , RL = 100 Vin = 3 V(peak) , f = 30 MHz RL = 3.9 k, CL = 10 pF Conditions
1
2
1
2
D
Min Typ
E
Max 30 0.3 1 1.5 1 65 pF ns % Unit µA V
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. y 2. Rated input/output frequency: 2 GHz 3. *: trr measuring instrument
Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Output Pulse
A
VR Pulse Generator (PG-10N) Rs = 50 Wave Form Analyzer (SAS-8130) Ri = 50
90% tp = 2 µs tr = 0.35 ns = 0.05
Note) The part number in the parenthesis shows conventional part number.
SKH00078BED
0.4±0.2
5°
Publication date: January 2002
1
MA3X717D, MA3X717E
IF V F
103 104 Ta = 125°C 103
IR V R
1.0
VF Ta
102
75°C 25°C
0.8
75°C
Forward current IF (mA)
Reverse current IR (µA)
Forward voltage VF (V)
Ta = 125°C 10
-20°C
IF = 30 mA 0.6
102 25°C
1
10
0.4
10 mA
10-1
1
0.2 1 mA
10-2
0
0.4
0.8
1.2
1.6
2.0
2.4
10-1
0
5
10
15
20
25
30
0 -40
0
40
80
120
160
Forward voltage VF (V)
Reverse voltage VR (V)
Ambient temperature Ta (°C)
IR T a
104
3.2 2.8
Ct VR
f = 1 MHz Ta = 25°C
Reverse current IR (µA)
3V 1V
Terminal capacitance Ct (pF)
103
VR = 30 V
2.4 2.0 1.6 1.2 0.8 0.4
102
10
1
10-1 -40
0
0
40
80
120
160
200
0
5
10
15
20
25
30
Ambient temperature Ta (°C)
Reverse voltage VR (V)
2
SKH00078BED
Others parts begin by ma
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