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Part: MA3X721MA721
Category:
Discrete
-> Diodes & Rectifiers
-> Schottky Diodes
Description: V<SUB>RM</SUB>(V) = 30 ;; I<SUB>F</SUB>(mA) = 200 ;; V<SUB>F</SUB>max.(V) = 0.55 ;; I<SUB>R</SUB>(µA) = 50 ;; Package = Mini3-G1
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download MA3X721MA721 datasheet File size : 35 kB
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Datasheet text preview:
Schottky Barrier Diodes (SBD)
MA3X721 (MA721)
Silicon epitaxial planar type
Unit: mm
For super high speed switching For small current rectification s Features
· IF(AV) = 200 mA rectification is possible · Mini type 3-pin package
1
0 10 0.40+0..05
0 10 0.16+0..06
3
0 25 1.50+0..05 02 2.8+0..3
2
(0.95) (0.95) 1.9±0.1
0 20 2.90+0..05
s Absolute Maximum Ratings Ta = 25°C
10°
Parameter Reverse voltage (DC) Non-repetitive peak forwardsurge-current * Peak forward current Forward current Junction temperature Storage temperature
Symbol VR IFSM IFM IF(AV) Tj Tstg
Rating 30 1 300 200 150 -55 to +150
Unit
02 1.1+0..1
(0.65)
V A mA mA °C °C
0 to 0.1
03 1.1+0..1
1: Anode 2: N.C. 3: Cathode EIAJ: SC-59 Mini3-G1 Package
Marking Symbol: M1M Internal Connection
3
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
1
2
s Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time * Symbol IR VF Ct tr r VR = 30 V IF = 200 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 30 3.0 Conditions Min Typ Max 50 0.55 Unit µA V pF ns
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. y 2. Rated input/output frequency: 1 GHz 3. *: trr measuring instrument
Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Output Pulse
A
VR Pulse Generator (PG-10N) Rs = 50 Wave Form Analyzer (SAS-8130) Ri = 50
90% tp = 2 µs tr = 0.35 ns = 0.05
Note) The part number in the parenthesis shows conventional part number.
Publication date: January 2002 SKH00080BED
0.4±0.2
5°
1
MA3X721
IF V F
103 100°C 25°C 102 104 105 Ta = 150°C
IR V R
0.5
VF Ta
Forward current IF (mA)
Reverse current IR (µA)
10
3
100°C
Forward voltage VF (V)
Ta = 150°C
-20°C
0.4
IF = 200 mA
10
0.3 100 mA 0.2
10
2
1
10
25°C
10-1
1
0.1
10-2
0
0.1
0.2
0.3
0.4
0.5
0.6
10-1
1 mA
0 5 10 15 20 25 30
0 -40
0
40
80
120
160
200
Forward voltage VF (V)
Reverse voltage VR (V)
Ambient temperature Ta (°C)
IR T a
105
32 28
Ct VR
f = 1 MHz Ta = 25°C
Terminal capacitance Ct (pF)
104
VR = 30 V 10 V 5V
Reverse current IR (µA)
24 20 16 12 8 4
103
102
10
1 -40
0
0
40
80
120
160
200
0
5
10
15
20
25
30
Ambient temperature Ta (°C)
Reverse voltage VR (V)
2
SKH00080BED
Others parts begin by ma
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