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Part: MA3X730
Category:
Description: Silicon Epitaxial Planar Type
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download MA3X730 datasheet File size : 35 kB
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Datasheet text preview:
Schottky Barrier Diodes (SBD)
MA3X730
Silicon epitaxial planar type
Unit : mm
For UHF mixer
0.65 ± 0.15
2.8 - 0.3 1.5 - 0.05
+ 0.25
+ 0.2
0.65 ± 0.15
0.95
· Two MA2X707s are contained in the (Mini (3-pin) type) · Large conversion gain (GC) · Small forward voltage VF · Optimum for the UHF band mixer
1.9 ± 0.2
2.9 - 0.05
I Features
1 3 2
+ 0.2
0.95
1.45 0 to 0.1
I Absolute Maximum Ratings Ta = 25°C
Parameter Forward voltage (DC) Reverse voltage (DC) Junction temperature Storage temperature Symbol VF VR Tj Tstg Rating 0.5 5 125 -55 to +125 Unit V V °C °C
1.1 - 0.1
0.1 to 0.3 0.4 ± 0.2
Marking Symbol: M2X Internal Connection
1 3 2
I Electrical Characteristics Ta = 25°C
Parameter Forward current (DC) Reverse current (DC) Forward voltage (DC) Reverse breakdown voltage (DC) Terminal capacitance Conversion gain*1,2 Symbol IF IR VF V(BR)R Ct GC VF = 0.5 V VR = 5 V IF = 2 mA IR = 1 mA VR = 0.5 V, f = 1 MHz RF = 890 MHz, LO = 935 MHz IF = 45 MHz C = 100 pF, Breakdown judgment point IR 35 µA 5 0.65 -7 100 0.85 -5 200 1.05 0.25 Conditions Min 35 Typ Max 100 35 Unit mA µA V V pF dB
Static breakdown strength
0.8
1 : Anode 1 2 : Cathode 2 3 : Cathode 1 JEDEC : TO-236 Anode 2 EIAJ : SC-59 Mini Type Package (3-pin)
0.16 - 0.06
+ 0.2
+ 0.1
0.4 - 0.05
+ 0.1
V
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment y 2. Rated input/output frequency: 935 MHz 3. Noise index is 8.5 dB 4. Each characteristic is a standard for individual diodes 5. *1 : Judgement is to be made per each chip lot. Sampling of LTPD = 20% and n = 11 is guaranteed. *2 : Set min. GC = -7 dB. Out-spec products, if any, this specification would be reviewed
1
MA3X730
IF VF
100 Ta = 25°C 100
Schottky Barrier Diodes (SBD)
IR V R
Ta = 25°C
Ct VR
100 f = 1 MHz Ta = 25°C
Terminal capacitance Ct (pF)
Forward current IF (mA)
Reverse current IR (µA)
10
10
10
1
1
1
0.1
0.1
0.1
0.01
0
0.2
0.4
0.6
0.8
1.0
0.01
0
1
2
3
4
5
0.01 0.01
0.1
1
10
Forward voltage VF (V)
Reverse voltage VR (V)
Reverse voltage VR (V)
2
Others parts begin by ma
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