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Part: MA3X786EMA786WK
Category:
Discrete
-> Diodes & Rectifiers
-> Schottky Diodes
Description: V<SUB>RM</SUB>(V) = 30 ;; I<SUB>F</SUB>(mA) = 100 ;; V<SUB>F</SUB>max.(V) = 0.55 ;; I<SUB>R</SUB>(µA) = 15 ;; Package = SSMini3-F2
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download MA3X786EMA786WK datasheet File size : 35 kB
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Datasheet text preview:
Schottky Barrier Diodes (SBD)
MA3X786D, MA3X786E (MA786WA, MA786WK)
Silicon epitaxial planar type
Unit: mm
For super high speed switching For small current rectification s Features
· Two MA3X786 (MA786) is contained in one package · IF(AV) = 100 mA rectification is possible · Optimum for high frequency rectification because of its short reverse recovery time (trr) · Low forward voltage VF and good rectification efficiency · Mini type 3-pin package
10°
0 10 0.40+0..05
0 10 0.16+0..06
3
0 25 1.50+0..05 02 2.8+0..3
1
2
(0.95) (0.95) 1.9±0.1
0 20 2.90+0..05
02 1.1+0..1
0 to 0.1
Parameter Reverse voltage (DC) Repetitive peak reverse-voltage Peak forward current Average forward current Single Double Single Double
*2y *2y
Symbol VR V RRM IFM IF(AV) IFSM Tj Tstg
Rating 30 30 300 200 100 70 1 125 -55 to +125
Unit V V mA
EIAJ: SC-59 Mini3-G1 Package
03 1.1+0..1
s Absolute Maximum Ratings Ta = 25°C
(0.65)
MA3X786D 1 Cathode 1 2 Cathode 2 3 Anode1, 2
MA3X786E Anode 1 Anode 2 Cathode 1, 2
mA A °C °C
Marking Symbol · MA3X786D: M3Y · MA3X786E: M3Z Internal Connection
3 3
Non-repetitive peak forwardsurge-current *1 Junction temperature Storage temperature
1
2
1
Note) *1: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive) *2: Value per chip
D
E
2
s Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time * Symbol IR VF Ct tr r VR = 30 V IF = 100 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 20 2 Conditions Min Typ Max 15 0.55 Unit µA V pF ns
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. y 2. Rated input/output frequency: 250 MHz 3. *: trr measuring instrument
Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Output Pulse
A
VR Pulse Generator (PG-10N) Rs = 50 Wave Form Analyzer (SAS-8130) Ri = 50
90% tp = 2 µs tr = 0.35 ns = 0.05
Note) The part number in the parenthesis shows conventional part number.
SKH00086BED
0.4±0.2
5°
Publication date: February 2002
1
MA3X786D, MA3X786E
IF V F
103 104
IR V R
1.0
VF Ta
102
75°C 25°C
103
0.8
Forward current IF (mA)
10
Ta = 125°C
-20°C
Reverse current IR (µA)
102
Forward voltage VF (V)
Ta = 125°C
0.6
75°C
1
10 25°C 1
0.4
IF = 100 mA
10-1
0.2
10 mA 3 mA
10-2
0
0.1
0.2
0.3
0.4
0.5
0.6
10-1
0
5
10
15
20
25
30
0 -40
0
40
80
120
160
200
Forward voltage VF (V)
Reverse voltage VR (V)
Ambient temperature Ta (°C)
IR T a
104
24
Ct VR
f = 1 MHz Ta = 25°C
VR = 30 V 102 3V 1V
Terminal capacitance Ct (pF)
103
20
Reverse current IR (µA)
16
12
10
8
1
4
10-1 -40
0
40
80
120
160
200
0
0
5
10
15
20
25
30
Ambient temperature Ta (°C)
Reverse voltage VR (V)
2
SKH00086BED
Others parts begin by ma
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