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Part: MA3X791MA791
Category:
Discrete
-> Diodes & Rectifiers
-> Schottky Diodes
Description: V<SUB>RM</SUB>(V) = 30 ;; I<SUB>F</SUB>(mA) = 100 ;; V<SUB>F</SUB>max.(V) = 0.55 ;; I<SUB>R</SUB>(µA) = 15 ;; Package = SSMini3-F2
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download MA3X791MA791 datasheet File size : 35 kB
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Datasheet text preview:
Schottky Barrier Diodes (SBD)
MA3X791 (MA791)
Silicon epitaxial planar type
Unit: mm
For super high speed switching For small current rectification s Features
· Two MA3X786 (MA786) is contained in one package (series connection) · IF(AV) = 100 mA rectification is possible · Optimum for high frequency rectification because of its short reverse recovery time (trr) · Low forward voltage VF and good rectification efficiency · Mini type 3-pin package
0 10 0.40+0..05
0 10 0.16+0..06
3
0 25 1.50+0..05 02 2.8+0..3
1
2
(0.65)
(0.95) (0.95) 1.9±0.1
0 20 2.90+0..05
10°
02 1.1+0..1 03 1.1+0..1
s Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Repetitive peak reverse-voltage Peak forward current Average forwar current Single Series * 2 y Single Series
*2y
Symbol VR V RRM IFM IF(AV) IFSM Tj Tstg
Rating 30 30 300 200 100 70 1 125 -55 to +125
Unit V V mA
1: Anode 1 2: Cathode 2 3: Cathode 1 Anode 2 EIAJ: SC-59 Mini3-G1 Package
Marking Symbol: M4A Internal Connection
3
mA A °C °C
Non-repetitive peak forwardsurge-current *1 Junction temperature Storage temperature
1
0 to 0.1
2
Note) *1: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive) *2: Value per chip
s Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time * Symbol IR VF Ct tr r VR = 30 V IF = 100 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 20 2 Conditions Min Typ Max 15 0.55 Unit µA V pF ns
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. y 2. Rated input/output frequency: 250 MHz 3. *: trr measuring instrument
Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Output Pulse
A
VR Pulse Generator (PG-10N) Rs = 50 Wave Form Analyzer (SAS-8130) Ri = 50 Note)
90% tp = 2 µs tr = 0.35 ns = 0.05
The part number in the parenthesis shows conventional part number.
0.4±0.2
5°
Publication date: February 2002
SKH00090BED
1
MA3X791
IF V F
1
10-2
IR V R
0.8 0.7
VF Ta
10-1
10-3
Ta = 125°C
Ta = 125°C
10-2 -20°C 10-3
75°C 25°C
Forward voltage VF (V)
Forward current IF (A)
Reverse current IR (A)
0.6 0.5 0.4 0.3 0.2 10 mA 0.1 3 mA IF = 100 mA
10-4
75°C
10-5 25°C 10-6
10-4
10
-5
0
0.1
0.2
0.3
0.4
0.5
0.6
10
-7
0
5
10
15
20
25
30
0 -40
0
40
80
120
160
200
Forward voltage VF (V)
Reverse voltage VR (V)
Ambient temperature Ta (°C)
IR T a
10 000
30
Ct VR
1 000 300
I F ( s u r g e ) tW
Ta = 25°C IF(surge) tW 100 30 10 3 1 0.3
3V 1V 100
Terminal capacitance Ct (pF)
1 000
25
20
15
10
10
1
5
0.1 -40
0
Forward surge current IF(surge) (A)
0 5 10 15 20 25 30
VR = 30 V
Reverse current IR (µA)
0
40
80
120
160
200
0.1 0.03
0.1
0.3
1
3
10
30
Ambient temperature Ta (°C)
Reverse voltage VR (V)
Pulse width tW (ms)
2
SKH00090BED
Others parts begin by ma
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