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Part: MA3XD14E
Category:
Description: Silicon Epitaxial Planar Type ( Cathode Common )
Company: Panasonic Industrial Company/Electronic Components
Datasheet: Download MA3XD14E datasheet File size : 35 kB
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Datasheet text preview:
Schottky Barrier Diodes (SBD)
MA3XD14E
Silicon epitaxial planar type (cathode common)
Unit : mm
For high-speed switching circuits I Features
· Mini type 3-pin package · Low forward rise voltage VF (VF < 0.4 V) · Cathode common type
2.9 - 0.05
+ 0.2
2.8 - 0.3 0.65 ± 0.15 1.5 - 0.05
+ 0.25
+ 0.2
0.65 ± 0.15
0.95
1.9 ± 0.2
1 3 2
0.95
1.45
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Non-repetitive peak forward surge current*2 Forward current (DC) Peak forward current Single Double*1 Single Double*1 Tj Tstg IFM Symbol VR V RRM IFSM IF Rating 20 20 1 100 70 300 200 125 -55 to +125 °C °C 1 mA Unit
0.8
V V A mA
1 : Anode 1 2 : Anode 2 3 : Cathode 1 Cathode 2 Mini Type Package (3-pin)
Marking Symbol: M5H Internal Connection
Junction temperature Storage temperature
Note) *1 : The value for operating one chip *2 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
0 to 0.1
0.1 to 0.3 0.4 ± 0.2
1.1 - 0.1
3 2
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct tr r VR = 10 V IF = 5 mA IF = 100 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 25 3.0 Conditions Min Typ Max 20 0.27 0.40 Unit µA V V pF ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. y 2. Rated input/output frequency: 250 MHz 3. * : trr measuring circuit
Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Output Pulse
A
VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50
90% tp = 2 µs tr = 0.35 ns = 0.05
0.16 - 0.06
+ 0.2
+ 0.1
0.4 - 0.05
+ 0.1
1
MA3XD14E
IF V F
1 10-1 Ta = 125°C
Schottky Barrier Diodes (SBD)
IR V R
10-1
10-2
Forward current IF (A)
10-2 75°C 25°C 10-4 20°C
Reverse current IR (A)
Ta = 125°C 10-3 75°C
10-3
10-4
10-5
10-5
25°C
10-6
0
0.1
0.2
0.3
0.4
0.5
0.6
10-6
0
5
10
15
20
25
30
Forward voltage VF (V)
Reverse voltage VR (V)
2
Others parts begin by ma
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